基于Nd:YAG/Cr:YAG键合晶体的被动调Q微片激光器  

Passive Q-switched Microchip Laser Based on Nd:YAG/Cr:YAG Bonded Crystals

作　　者：王运 王勇刚[1] 刘思聪 陈兆哲 王慧中 黎巍 WANG Yun;WANG Yonggang;LIU Sicong;CHEN Zhaozhe;WANG Huizhong;LI Wei(School of Physics and Information Technology,Shaanxi Normal University,Xi′an 710119,China)

机构地区：[1]陕西师范大学物理学与信息技术学院,陕西西安710119

出　　处：《聊城大学学报（自然科学版）》2021年第3期28-32,47,共6页Journal of Liaocheng University:Natural Science Edition

基　　金：国家自然科学基金项目(12075190);陕西省自然科学基金项目(2017JM6091)资助。

摘　　要：利用端面泵浦Nd:YAG/Cr:YAG键合晶体搭建了1064 nm被动调Q微片激光器。采用100 Hz脉冲光源泵浦键合晶体,获得了脉冲宽度1.72 ns、峰值功率70.3 kW、单脉冲能量120μJ的被动调Q脉冲激光,相应的最大光-光转化效率为4.1%。利用连续光源泵浦,获得了重复频率为3.1 kHz、脉冲宽度为3.54 ns的被动调Q脉冲激光。相应的单脉冲能量达到了158.7μJ,峰值功率为44.8 kW,平均输出功率为492 mW,斜效率为6.7%。The Nd:YAG/Cr:YAG bonded crystal is used to construct the passive Q-switched microchip laser at 1064 nm.A passive Q-switched laser with pulse duration of 1.72 ns,peak power of 70.3 kW and single pulse energy of 120μJ was obtained by pumping bonded crystal with 100 Hz pulsed light source,and the corresponding maximum light-to-light conversion efficiency was 4.1%.A passive Q-switched laser with repetition rate of 3.1 kHz and pulse duration of 3.54 ns was obtained by pumping continuous light source.The corresponding single pulse energy reached 158.7μJ,the peak power was 44.8 kW,the average output power was 492 mW,and the slope efficiency was 6.7%.

关 键 词：微片激光器 被动调Q Nd:YAG/Cr:YAG 可饱和吸收体 

分 类 号：TN[电子电信]