数码电子雷管抗静电性能研究  被引量:5

Research on Antistatic Performance of Digital Electronic Detonator

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作  者:杨文[1,2] 岳彩新 宋家良 张阳光 YANG Wen;YUE Cai-xin;SONG Jia-liang;ZHANG Yang-guang(China Coal Research Institute,Beijing,100013;Huaibei Blasting Technology Research Institute Co.Ltd.,CCTEC,Huaibei,235000)

机构地区:[1]煤炭科学研究总院,北京100013 [2]中煤科工集团淮北爆破技术研究院有限公司,安徽淮北235000

出  处:《火工品》2021年第1期9-11,共3页Initiators & Pyrotechnics

摘  要:为了研究数码电子雷管的抗静电性能,采用静电感度仪,对数码电子雷管以脚-脚和脚-壳放电方式进行不同电压的静电试验,分析静电放电形式、放电位置和放电次数对数码电子雷管性能的影响。研究发现,以脚-脚形式放电时,静电会导致数码电子雷管芯片失效,但不会导致雷管发火;脚-壳形式放电时,只有形成静电放电通道才会对雷管造成损伤,芯片失效率因放电位置不同而差异较大,多次的静电作用会增加芯片失效率。In order to study the antistatic performance of the digital electronic detonator,electrostatic tests of digital electronic detonators based on the foot-foot and foot-shell discharge methods at different voltages were performed,by use of an electrostatic sensitivity meter.The impacts of discharge method,discharge position and times on the performance of digital electronic detonator were mainly studied.Research show that foot-foot discharge method will cause the chip to fail,while not cause the detonator to ignite;The foot-shell discharge method will damage the detonator only when an electrostatic discharge channel is formed,the failure rate of the digital electronic detonator chip varies greatly due to different discharge positions,and repeated electrostatic action will increase the chip failure rate.

关 键 词:数码电子雷管 抗静电 芯片失效 放电位置 

分 类 号:TJ452.3[兵器科学与技术—火炮、自动武器与弹药工程]

 

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