GaAs相关多普勒放大器的抗静电设计  

Anti-Electrostatic Design for GaAs Correlation Doppler Amplifier

作　　者：纪新峰[1] 李宏民[1] 胡丹[2] 张红旗[1] 张好军[1] JI Xinfeng;LI Hongmin;HU Dan;ZHANG Hongqi;ZHANG Haojun(Airborn Missile Academy of China, Luoyang 471009, China;The 13th Research Institute of CETC, Shijiazhuang 050002, China)

机构地区：[1]中国空空导弹研究院,河南洛阳471009 [2]中国电子科技集团第十三研究所,石家庄050002

出　　处：《兵器装备工程学报》2021年第3期253-257,共5页Journal of Ordnance Equipment Engineering

摘　　要：静电放电严重影响砷化镓器件的可靠性,为了提高砷化镓相关多普勒放大器(简称相关多放)的抗静电能力,设计了一种硅隔离和双二极管网络的抗静电保护电路;硅器件建立了敏感芯片核心区域和电压及电流的缓冲隔离,双向对称导通的双二极管网络有利于泄放大电流;基于静电放电人体模型,运用静电模拟仪器对相关多放进行了模拟试验,并对其性能进行测试;结果表明:器件的抗静电能力从200 V提高到了1400 V,开关选通前后沿小于5 ns,开关延迟不大于10 ns,控制信号泄露不大于40 mV,开关输出幅度不小于1 V。抗静电能力改进后,模块的开关性能保持不变,雷达接收机增益和噪声一致。导弹系统试验证明,抗静电措施稳定、有效,提高了产品的可靠性。The reliability of GaAs devices is affected severely by Electrostatic Discharge.To improve the electrostatic discharge protection of GaAs correlation doppler amplifier,anti-static schemes of the Si buffering and the dual-diode network were designed.Si devices established current and voltage buffering of sensitive chip-level core regions.The dual-diode network which is bidirectional and symmetric turn-on can discharged a high current.The components were subjected to simulation test by using static simulation equipment based on electrostatic discharge human body model.The results show that the anti-static performance of the device is improved from 200 V to 1400 V,the rise/fall time are less than 5 ns,the delay time and the leakage of control signal are no more than 10 ns and 40 mV respectively and the switch’s output amplitude is more than 1 V.The switch’s characteristics remain unchanged after the improvement of anti-static performance.The gain and the noise are basically same in radio receiver.The measures of anti-electrostatic meet high reliability applications and effectiveness in the process of missile’s work.

关 键 词：GaAs开关 静电释放 静电放电模型 静电防护 硅隔离 双二极管网络 

分 类 号：TN386[电子电信—物理电子学] TN952