Spectroscopic investigation of defects mediated oxidization of single-layer MoS_(2)  

作　　者：HE ZuYun GUO Zheng ZHONG Xiao CHEN XiaoFei XUE JianMing WANG XinWei CHEN Yan 

机构地区：[1]School of Environment and Energy,South China University of Technology,Guangzhou 510006,China [2]School of Advanced Materials,Shenzhen Graduate School,Peking University,Shenzhen 518055,China [3]State Key Laboratory of Nuclear Physics and Technology,School of Physics,Peking University,Beijing 100871,China

出　　处：《Science China(Technological Sciences)》2021年第3期611-619,共9页中国科学（技术科学英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.11605063,11975102 and 51672011);Guangzhou Science and Technology Program General Projects(Grant No.201707010146);IAEA(CRP No.F11020 and Contract No.21063);the Fundamental Research Funds for the Central Universities(Grant No.2018MS40);State Key Laboratory of Pulp and Paper Engineering(Grant No.2018TS08);Guangdong Pearl River Talent Program(Grant No.2017GC010281);the Guangdong Innovative and Entrepreneurial Research Team Program(Grant No.2014ZT05N200)。

摘　　要：Due to the extremely large surface to bulk ratio,the properties of single layer(SL)MoS_(2)are largely determined by its interaction with environment.One critical interaction process that has been intensively investigated is the oxidation process of MoS_(2).Despite numerous previous explorations,the detailed mechanism regarding how MoS_(2)reacts with oxygen is still not well understood.In this work,we systematically investigate the impact of intrinsic and pre-created defects on the oxidation process of SL MoS_(2).For pristine SL MoS_(2),the oxidation is found to initiate near point defects and grain boundaries,leading to the formation of triangle pits in the basal plane and cracks near the grain boundaries.The pre-created defects introduced by ion irradiation are found to serve as the oxidation center,resulting in a more uniform oxidation process.The oxidation is found to introduce p-type doping in the SL MoS_(2),leading to the blue shift of Raman and photoluminescence(PL)spectra.The shift is found to be more for the region near the grain boundary and for the samples with more pre-created defects.Our results suggest that the presence of defects can strongly promote the oxidation reaction of SL MoS_(2)in ambient condition,which significantly affects the stability and functionality of materials.

关 键 词：single layer MoS_(2) OXIDATION DEFECT 

分 类 号：TB34[一般工业技术—材料科学与工程]