Band-structure-engineered high-gain LWIR photodetector based on a type-Ⅱ superlattice  

作　　者：Arash Dehzangi Jiakai Li Manijeh Razeghi 

机构地区：[1]Center for Quantum Devices,Department of Electrical and Computer Engineering,Northwestern University,Evanston,IL 60208,USA

出　　处：《Light(Science & Applications)》2021年第2期140-146,共7页光（科学与应用)（英文版）

基　　金：supported by the Defense Advanced Research Projects Agency(DARPA)under agreement number FA8650-18-1-7810。

摘　　要：The LWIR and longer wavelength regions are of particular interest for new developments and new approaches to realizing long-wavelength infrared(LWIR)photodetectors with high detectivity and high responsivity.These photodetectors are highly desirable for applications such as infrared earth science and astronomy,remote sensing,optical communication,and thermal and medical imaging.Here,we report the design,growth,and characterization of a high-gain band-structure-engineered LWIR heterojunction phototransistor based on type-Ⅱ superlattices.The 1/e cut-off wavelength of the device is 8.0 pm.At 77 K,unity optical gain occurs at a 90 mV applied bias with a dark current density of 3.2×10^(-7)A/cm^(2).The optical gain of the device at 77 K saturates at a value of 276 at an applied bias of 220 mV.This saturation corresponds to a responsivity of 1284 A/W and a specific detectivity of 2.34×10^(13)cm Hz^(1/2)/W at a peak detection wavelength of~6.8 pm.The type-Ⅱ superlattice-based high-gain LWIR device shows the possibility of designing the high-performance gain-based LWIR photodetectors by implementing the band structure engineering approach.

关 键 词：HETEROJUNCTION structure high 

分 类 号：TN215[电子电信—物理电子学]