New DDSCR structure with high holding voltage for robust ESD applications  

作　　者：Zi-Jie Zhou Xiang-Liang Jin Yang Wang Peng Dong 周子杰;金湘亮;汪洋;董鹏(School of Physics and Optoelectronics,Xiangtan University,Xiangtan 411105,China;Hunan Engineering Laboratory for Microelectronics,Optoelectronics and System on a Chip,Xiangtan 411105,China;School of Physics and Electronics,Hunan Normal University,Changsha 410081,China;Super-ESD Microelectronics Technology CO.,LTD.,Changsha 410100,China)

机构地区：[1]School of Physics and Optoelectronics,Xiangtan University,Xiangtan 411105,China [2]Hunan Engineering Laboratory for Microelectronics,Optoelectronics and System on a Chip,Xiangtan 411105,China [3]School of Physics and Electronics,Hunan Normal University,Changsha 410081,China [4]Super-ESD Microelectronics Technology CO.,LTD.,Changsha 410100,China

出　　处：《Chinese Physics B》2021年第3期529-539,共11页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61774129,61827812,and 61704145);the Huxiang High-level Talent Gathering Project from the Hunan Science and Technology Department,China(Grant No.2019RS1037);the Changsha Science and Technology Plan Key Projects,China(Grant Nos.kq1801035 and kq1703001).

摘　　要：A novel dual direction silicon-controlled rectifier(DDSCR)with an additional P-type doping and gate(APGDDSCR)is proposed and demonstrated.Compared with the conventional low-voltage trigger DDSCR(LVTDDSCR)that has positive and negative holding voltages of 13.371 V and 14.038 V,respectively,the new DDSCR has high positive and negative holding voltages of 18.781 V and 18.912 V in a single finger device,respectively,and it exhibits suitable enough positive and negative holding voltages of 14.60 V and 14.319 V in a four-finger device for±12-V application.The failure current of APGDDSCR is almost the same as that of LVT-DDSCR in the single finger device,and the four-finger APGDDSCR can achieve positive and negative human-body model(HBM)protection capabilities of 22.281 kV and 23.45 kV,respectively,under 40-V voltage of core circuit failure,benefitting from the additional structure.The new structure can generate a snapback voltage on gate A to increase the current gain of the parasitic PNP in holding voltage.Thus,a sufficiently high holding voltage increased by the structure can ensure that a multi-finger device can also reach a sufficient holding voltage,it is equivalent to solving the non-uniform triggering problem of multi-finger device.The operating mechanism and the gate voltage are both discussed and verified in two-dimensional(2D)simulation and experiemnt.

关 键 词：dual direction silicon-controlled rectifier(DDSCR) failure current snapback gate voltage simulation transmission line pulsing(TLP) 

分 类 号：TN40[电子电信—微电子学与固体电子学] O441.1[理学—电磁学]