Raman scattering from highly-stressed anvil diamond  

作　　者：Shan Liu Qiqi Tang Binbin Wu Feng Zhang Jingyi Liu Chunmei Fan Li Lei 刘珊;唐琦琪;吴彬彬;张峰;刘静仪;范春梅;雷力(Institute of Atomic and Molecular Physics,Sichuan University,Chengdu 610065,China;Key Laboratory of High Energy Density Physics and Technology(Ministry of Education),Sichuan University,Chengdu 610065,China)

机构地区：[1]Institute of Atomic and Molecular Physics,Sichuan University,Chengdu 610065,China [2]Key Laboratory of High Energy Density Physics and Technology(Ministry of Education),Sichuan University,Chengdu 610065,China

出　　处：《Chinese Physics B》2021年第1期407-411,共5页中国物理B（英文版）

基　　金：Project support by the National Natural Science Foundation of China(Grant No.11774247)。

摘　　要：The high-frequency edge of the first-order Raman mode of diamond reflects the stress state at the culet of anvil, and is often used for the pressure calibration in diamond anvil cell(DAC) experiments. Here we point out that the high-frequency edge of the diamond Raman phonon corresponds to the Brillouin zone(BZ) center Γ point as a function of pressure. The diamond Raman pressure gauge relies on the stability of crystal lattice of diamond under high stress. Upon the diamond anvil occurs failure under the uniaxial stress(197 GPa), the loss of intensity of the first-order Raman phonon and a stressdependent broad Raman band centered at 600 cm^(-1) are observed, which is associated with a strain-induced local mode corresponding to the BZ edge phonon of the L1 transverse acoustic phonon branch.

关 键 词：diamond anvil cell Raman scattering pressure calibration Brillouin zone 

分 类 号：TQ163[化学工程—高温制品工业] O657.37[理学—分析化学]