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作 者:Cui Yang Guo-Liang Peng Wei Mao Xue-Feng Zheng Chong Wang Jin-Cheng Zhang Yue Hao 杨翠;彭国良;毛维;郑雪峰;王冲;张进成;郝跃(School of Physics and Optoelectronic Engineering,Xidian University,Xi’an 710071,China;Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China)
机构地区:[1]School of Physics and Optoelectronic Engineering,Xidian University,Xi’an 710071,China [2]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China
出 处:《Chinese Physics B》2021年第1期593-599,共7页中国物理B(英文版)
基 金:Project supported by the National Natural Science Foundation of China(Grant No.61574112)。
摘 要:A novel CMOS image sensor(CIS) pinned photodiode(PPD) pixel, named as O-T pixel, is proposed and investigated by TCAD simulations. Compared with the conventional PPD pixel, the proposed pixel features the overlapping gate(OG)and the temporary storage diffusing(TSD) region, based on which the several-nanosecond-level charge transfer could be achieved and the complete charge transfer from the PPD to the floating node(FD) could be realized. And systematic analyses of the influence of the doping conditions of the proposed processes, the OG length, and the photodiode length on the transfer performances of the proposed pixel are conducted. Optimized simulation results show that the total charge transfer time could reach about 5.862 ns from the photodiode to the sensed node and the corresponding charge transfer efficiency could reach as high as 99.995% in the proposed pixel with 10 μm long photodiode and 2.22 μm long OG. These results demonstrate a great potential of the proposed pixel in high-speed applications.
关 键 词:CMOS image sensor charge transfer efficiency high-speed charge transfer pinned photodiode
分 类 号:TP212[自动化与计算机技术—检测技术与自动化装置]
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