晶格匹配InAlN/GaN异质结肖特基接触反向电流的电压与温度依赖关系  

Voltage and temperature dependence of reverse leakage current of lattice-matched InAlN/GaN heterostructure Schottky contact

作　　者：闫大为 吴静 闫晓红 李伟然 俞道欣 曹艳荣 顾晓峰[1] Yan Da-Wei;Wu Jing;Yan Xiao-Hong;Li Wei-Ran;Yu Dao-Xin;Cao Yan-Rong;Gu Xiao-Feng(Engineering Research Center of Internet of Things Technology Applications(Ministry of Education),Department of Electronic Engineering,Jiangnan University,Wuxi 214122,China;Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade,Beijing Smart-Chip Microelectronics Technology Co.,Ltd.,Beijing 102200,China;State Key Discipline Laboratory of Wide Band-gap Semiconductor Techonology,Xidian University,Xi’an 710071,China)

机构地区：[1]江南大学电子工程系,物联网技术应用教育部工程研究中心,无锡214122 [2]北京智芯微电子科技有限公司,北京市电力高可靠性集成电路设计工程技术研究中心,北京102200 [3]西安电子科技大学,宽带隙半导体技术国家重点学科实验室,西安710071

出　　处：《物理学报》2021年第7期293-299,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61504050,11604124,51607022);北京智芯微电子科技有限公司实验室开放基金资助的课题.

摘　　要：测量了晶格匹配InAlN/GaN异质结肖特基接触的反向变温电流-电压特性曲线,研究了反向漏电流的偏压与温度依赖关系.结果表明:1)电流是电压和温度的强函数,饱和电流远大于理论值,无法采用经典热发射模型解释;2)在低偏压区,数据满足ln(I/E)-E^(1/2)线性依赖关系,电流斜率和激活能与Frenkel-Poole模型的理论值接近,表明电流应该为FP机制占主导;3)在高偏压区,数据满足ln(I/E)-E^(1/2)线性依赖关系,电流斜率不随温度改变,表明Fowler-Nordheim隧穿机制占主导;4)反向电流势垒高度约为0.60 eV,远低于热发射势垒高度2.91 eV,表明可导位错应是反向漏电流的主要输运通道,局域势垒由于潜能级施主态电离而被极大降低.In this paper,the temperature-dependent current-voltage(T-I-V)characteristics of lattice-matched InAlN/GaN heterostructure Schottky contact in a reverse direction are measured,and the voltage dependence and temperature dependence of the leakage current are studied.The obtained results are as follows.1)The reverse current is a strong function of voltage and temperature,and the saturation current is much larger than the theoretical value,which cannot be explained by the classical thermionic emission(TE)model.2)In the lowbias region,the ln(I/E)-E^(1/2)data points obey a good linear relationship,whose current slope and corresponding activation energy are close to the values predicted by the Frenkel-Poole(FP)model,indicating the dominant role of the FP emission mechanism.3)In the high-bias region,the ln(I/E)-E^(1/2)data points also follow a linear dependence,but the current slope is a weak function of temperature,indicating that the Fowler-Nordheim tunneling mechanism should be mainly responsible for the leakage current.4)The current barrier height is extracted to be about 0.60 eV,which is much lower than the value of 2.91 eV obtained from the TE model,confirming the primary leakage path of the conductive dislocations,where the localized barrier is significantly reduced due to the ionization of shallow donor-like traps.

关 键 词：反向漏电流 偏压与温度 可导位错 浅能级施主态 

分 类 号：TB34[一般工业技术—材料科学与工程] TN386[电子电信—物理电子学]