Defects of laser-irradiated KDP crystals with different fluences studied by photoluminescence spectroscopy  

作　　者：Xiangcao Li Bao’an Liu Chunyan Yan Jie Ren Chang Liu Xin Ju 

机构地区：[1]Department of Physics,University of Science and Technology Beijing,Beijing 100083,China

出　　处：《Matter and Radiation at Extremes》2020年第3期20-24,共5页极端条件下的物质与辐射（英文）

基　　金：This work was supported by the National Natural Science Foundation of China(NSFC)under Grant No.51402173;the Fundamental Research Funds for the Central Universities(Grant No.FRF-TP-15-099A1).

摘　　要：Photoluminescence(PL)bands from potassium dihydrogen phosphate(KDP)crystals are studied by time-resolved PL spectroscopy.KDPcrystals irradiated at a laser fluence of 11.5 J/cm^(2) are found to have the highest probability of phosphorus–oxygen hole center defects and the lowest probability of phosphorus-oxygen electric center defects,in contrast to the probabilities of these defects forKDPcrystals irradiated at 9.0 J/cm^(2).The probabilities of these two defects occurring in retired components are found to be intermediate between those for crystals irradiated at the two different fluences.The two types of defects may result fromtwo differentmechanisms and may interconvert under certain conditions.Thus,there are differences between the defects in KDP crystals irradiated at a high laser fluence and those in retired components.

关 键 词：LASER KDP IRRADIATED 

分 类 号：TN24[电子电信—物理电子学]