Sb2O3掺杂BiFeO3-BaTiO3压电陶瓷的结构及电性能研究  

Structure and Electrical Properties of Sb_(2)O_(3)-Doped BiFeO_(3)-BaTiO_(3) Piezoelectric Ceramics

作　　者：黄志强 何秀将 何新华[1] 符小艺[1] 王歆[1] 卢振亚[1] HUANG Zhiqiang;HE Xiujiang;HE Xinhua;FU Xiaoyi;WANG Xin;LU Zhenya(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510641,China)

机构地区：[1]华南理工大学材料科学与工程学院,广州510641

出　　处：《人工晶体学报》2021年第3期565-571,586,共8页Journal of Synthetic Crystals

基　　金：广东省重点领域研发计划(2020B0109380001)。

摘　　要：采用传统固相烧结法合成了0.7BiFeO_(3)-0.3BaTiO_(3)+x%Sb_(2)O_(3)(质量分数)陶瓷(BFO-BTO+x Sb,x=0.00~0.20),研究了Sb_(2)O_(3)掺杂对BFO-BTO陶瓷的晶相结构、介电、导电以及压电和铁电性能的影响,并对影响机理进行探讨。结果表明:Sb掺杂导致陶瓷的晶体结构由伪立方相向菱形相转化。Sb的B位取代增加了BFO-BTO+x Sb陶瓷的铁电弛豫性,降低高温损耗,并使居里温度Tc有所降低。导电特性的研究表明,Sb掺杂改变了V×O和Fe 2+的浓度,降低了电导率,但没有改变陶瓷的导电机制,其主要载流子是氧空位。Sb掺杂量x=0.05时,BFO-BTO+x Sb陶瓷表现出最佳的综合电性能:d 33=213 pC/N,k p=28.8%,Q m=38,T c=520℃,P r=24.7μC/cm^(2)。0.7BiFeO 3-0.3BaTiO 3+x%Sb 2 O 3(mass fraction)ceramics(BFO-BTO+x Sb,x=0.00~0.20)were synthesized by the conventional solid state reaction method,and the effect of Sb 2 O 3 doping on the crystalline phase structure,dielectric,conductive,piezoelectric and ferroelectric properties of BFO-BTO ceramics was investigated,along with doping mechanism.The results indicate that Sb doping change the crystal structure from a pesodocubic lattice to a rhombohedral lattice.Sb substitution for B site increases ferroelectric relaxation,decreases dielectric loss at high temperature,and also lowers the Curie temperature.The conductive characteristics demonstrate that Sb doping changes the concentration of V×O and Fe 2+,and decreases the conductivity,without changing the conductive mechanism with oxygen vacancy as the dominant carrier.BFO-BTO+x Sb ceramics exhibit optimum electric properties at x=0.05:d 33=213 pC/N,k p=28.8%,Q m=38,T c=520℃,P r=24.7μC/cm 2.

关 键 词：BiFeO 3-BaTiO 3 Sb 2 O 3掺杂 固相烧结法 介电性能 压电性能 弛豫特性 

分 类 号：TM282[一般工业技术—材料科学与工程]