深亚微米CMOS管总剂量辐照特性的对比研究  

Comparative Study on Total Dose Irradiation Characteristics of Deep Submicron CMOS Transistors

作　　者：仲崇慧 于晓权[2] ZHONG Chonghui;YU Xiaoquan(China Electronics Technology Group Corporation,Beijing 100846,P.R.China;The 24th Research Institute of China Electronics Technology Group Corporation,Chongqing 400060,P.R.China)

机构地区：[1]中国电子科技集团有限公司,北京100846 [2]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2021年第1期121-125,共5页Microelectronics

摘　　要：对深亚微米NMOS和PMOS管进行了^(60)Coγ总剂量辐射实验。实验结果表明,PMOS管在转移特性、噪声、匹配特性方面比NMOS管的抗辐照能力更强。对NMOS管和PMOS管的辐照损伤机理进行了理论分析。分析结果表明,不同的衬底类型导致了PMOS管和NMOS管的辐照效应的差异。基于实验与分析结果,提出了一些深亚微米模拟IC的抗辐照设计方案。The 60Co γ total dose radiation experiments were carried out on deep submicron NMOS and PMOS transistors. The experimental results showed that PMOS transistors had better anti-irradiation capability than NMOS transistors in terms of transfer characteristics, noise and matching characteristics. The radiation damage mechanism of NMOS transistors and PMOS transistors were analyzed theoretically. The results showed that different substrate types lead to different radiation effects of PMOS transistors and NMOS transistors. Based on the experimental and analytical results, some anti-radiation design schemes for deep submicron IC simulation were proposed.

关 键 词：辐照损伤 总剂量 噪声 匹配特性 抗辐射设计 

分 类 号：TN386.1[电子电信—物理电子学]