基于电阻焦耳热调控3D纳米桥结的临界电流  

Tuning of Critical Current of 3D Nb Nano-bridge Junctions by the Joule Heating Effect

作　　者：吴丽丽 汤演 张登辉 陈垒[1,2] 王镇 WU Lili;TANG Yan;ZHANG Denghui;CHEN Lei;WANG Zhen(State Key Laboratory of Functional Materials for Information,Center for Excellence in Superconducting Electronics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Science,Shanghai,200050,China;University of Chinese Academy of Sciences,Beijing,100049,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所,超导电子学卓越创新中心,信息功能材料国家重点实验室,上海200050 [2]中国科学院大学,北京100049

出　　处：《低温物理学报》2020年第3期136-140,共5页Low Temperature Physical Letters

基　　金：国家重点研发计划(批准号:2017YFF0206105);中科院院前沿科学重点项目(批准号:QYZDY-SSW-JSC033);中科院先导A项目(批准号:XDA18000000);国家自然基金重大仪器项目(批准号:11827805)资助的课题。

摘　　要：近些年来,超导三端子器件通过引入第三端可控变量可以实现单个约瑟夫森结两端临界电流的调控,受到广泛关注.本文介绍了一种微缩型的超导三端子器件结构,通过电阻电流产生的焦耳热来调节3D纳米桥结附近的局部温度,从而实现有效调节3D纳米桥结的临界电流.本实验利用了两种氩(Ar)离子表面清洗条件制备获得了两种不同电阻特性的铝(Al)电阻条,并且测量表征了这两种电阻条的电流焦耳功率分别与单个和两个3D纳米桥结的临界电流之间的变化关系.我们实现了最低使用33μW的电阻功率,来达到单个3D纳米桥结的临界电流的50%范围内的调节,从而验证了本超导三端子器件结构的可实用性.Recently, tuning the critical current of Josephson junctions to develop a three-terminal superconducting device draws wide attention. Here, we demonstrate a miniaturized three-terminal device that consists of a 3D nano-bridge junction and a resistor. We employ the Joule heating effect to adjust the local temperature of the junction, in order to tune the critical current of single nano-bridge junction. We compared the different clean conditions in the fabrication of the aluminum resistor and characterized the influence of Joule heating on the critical current of single and two 3D nano-bridge junctions, respectively. The result shows at least 33 μW resistor power can achieve 50% tuning of the critical current. Our initial study indicates that the structure is promising for future three-terminal superconducting devices.

关 键 词：超导三端子器件 3D纳米桥结 临界电流 焦耳热 

分 类 号：TB383.1[一般工业技术—材料科学与工程] TN03[电子电信—物理电子学]