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作 者:唐威 马姗姗 穆新华 王江涛 TANG Wei;MA Shanshan;MU Xinhua;WANG Jiangtao(School of Electronic Engineering,Xi'an University of Posts and Telecommunications,Xi'an 710121,China)
机构地区:[1]西安邮电大学电子工程学院,陕西西安710121
出 处:《西安邮电大学学报》2021年第1期54-59,共6页Journal of Xi’an University of Posts and Telecommunications
摘 要:针对电源噪声影响图像、声音信息的传输质量,系统电源上电时间过长导致延时增大、时序紧张等问题设计了一种可快速启动的高电源抑制比的带隙基准源。通过引入负反馈回路,维持基准电压的稳定,以提升基准源的电源抑制比。设计了快速启动电路,在电源上电时通过开关管快速导通以拉高基准电压,加速了带隙基准源的启动,在基准建立好之后启动电路停止工作。基于5 V 0.35μm互补金属氧化物半导体(Complementary Metal Oxide Semiconductor,CMOS)工艺设计了基准电压源,仿真结果表明,在-40℃~125℃温度变化范围内,基准源电压变化为5.33 mV,电源抑制比在100 Hz以下达到-90.1 dB,启动时间为9μs。设计的带隙基准电压源启动速度较快,电源抑制比较高。The transmission quality of image and sound information is affected by noise from the power supply.If the power-on time is too long among the power supplies in a system,the delay will increase,and the time sequence will be tight.A fast start-up bandgap reference with high power supply rejection ratio(PSRR)is designed to solve these problems,where a negative feedback loop is built to maintain the reference voltage stable and to improve the PSRR.In the start-up circuit,the transistor can turn on quickly and pull up the reference voltage at power-on,accelerating the start-up of the reference.The start-up circuit can stop working when the reference is established.The circuit has been fabricated with 5 V 0.35μm complementary metal oxide semiconductor(CMOS)technology.The simulation results show that its voltage has a change of 5.33 mV in the temperature range of-40℃~125℃.Its PSRR reaches-90.1 dB below 100 Hz,and its starting time is 9μs.The designed bandgap reference has fast start-up speed and high PSRR.
关 键 词:低压差稳压器 带隙基准源 无运放基准源 快速启动 负反馈回路
分 类 号:TN432[电子电信—微电子学与固体电子学]
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