基于4G LET高增益微带天线阵列一体化  

Integration Based on 4G LET High Gain Microstrip Antenna Array

作　　者：黄杨 黄季甫 HUANG Yang;HUANG Ji-fu(School of Information Science and Engineering,Ningbo University,Ningbo 315211,China)

机构地区：[1]宁波大学信息科学与工程学院,宁波315211

出　　处：《无线通信技术》2020年第4期11-14,共4页Wireless Communication Technology

摘　　要：提出了一种新型的同轴馈电和高增益的阵列天线。提出的天线主要是由两层板构成,上面是辐射层,下层是功率分配器网络,由同轴馈电到辐射元,每个天线单元的方向图均朝上,可以产生大增益,实现覆盖LTE频段(1.7-1.9Ghz)的天线,该天线单元在通带内实现8.4dBi的平均增益,带外抑制水平超过21dB。A new type of coaxial feed and high gain array antenna is proposed. The proposed antenna is mainly composed of two layers of boards, the upper layer is the radiating layer, and the lower layer is the power divider network, which is fed to the radiating element by coaxial, and the pattern of each antenna element is upward, which can generate large gains and achieve coverage LTE frequency band(1.7-1.9 Ghz) antenna, the antenna unit achieves an average gain of 8.4 dBi in the passband, and the out-of-band suppression level exceeds 21 dB.

关 键 词：同轴馈电 阵列天线 LTE频段 高增益 功分器 

分 类 号：TN828.4[电子电信—信息与通信工程]