后续处理对SrTiO_(3)基晶界层电容器绝缘电阻的影响  

Effect of subsequent thermal and electrical treatment on resistance of SrTiO_(3)grain boundary layer capacitors

作　　者：张木森 石大为 徐玲芳[1] 王瑞龙 肖海波[1] 梁世恒 杨昌平[1,3] ZHANG Musen;SHI Dawei;XU Lingfang;WANG Ruilong;XIAO Haibo;LIANG Shiheng;YANG Changping(Faculty of Physics and Electronic Technology,Hubei University,Wuhan 430062,China;College of Mathematical and Physical Sciences,Hubei Polytechnic University,Huangshi 435003,China;Faculty of Materials Science and Engineering,Taiyuan University of Science and Technology,Taiyuan 030024,China)

机构地区：[1]湖北大学物理与电子科学学院,湖北武汉430062 [2]湖北理工学院数理学院,湖北黄石435003 [3]太原科技大学材料科学与工程学院,山西太原030024

出　　处：《湖北大学学报（自然科学版）》2021年第3期289-294,共6页Journal of Hubei University：Natural Science

基　　金：国家自然科学基金(11674086);贵州省经济和信息化委员会技术创新项目(2017021)资助

摘　　要：采用二步法制备SrTiO_(3)晶界层电容器,并对其进行后续热、电和液氮处理,研究处理前后电容器电学性能的变化.实验结果表明,在50 V直流电压和200℃条件下对SrTiO_(3)晶界层电容器进行后续快速退火和液氮处理后,其介电常数和介电损耗在基本保持不变的情况下,其绝缘电阻值可得到大幅提升,从最初30 GΩ上升至200 GΩ.通过处理,最后可获得平均介电常数为30000,损耗为0.003,绝缘电阻(50 V测量)为200 GΩ的高性能SrTiO_(3)晶界层电容器.SrTiO_(3) grain boundary layer capacitors were fabricated by the two-step method and the dielectric properties were studied.The results show that the insulating resistance of SrTiO_(3) grain boundary layer capacitor can be dramatically enhanced from the initial 30 GΩup to 200 GΩby the subsequent treatment of rapid annealing at 200℃under 50 V with quenching in liquid nitrogen while the dielectric constant and dielectric loss remain basically unchanged.Herein,a SrTiO_(3) grain boundary layer ceramic capacitor with an average value of 30000 for dielectric constant,dielectric loss 0.003,and insulating resistance 200 GΩat 50 V was obtained.

关 键 词：SrTiO_(3)晶界层电容器 介电性能 后续热电处理 绝缘电阻 

分 类 号：TQ174.75[化学工程—陶瓷工业]