GH5605合金抗氧化性能研究  

Study on Oxidation Resistance of GH5605 Alloy

作　　者：魏然[1] 牛永吉[1] 章清泉[1] WEI Ran;NIU Yongji;ZHANG Qingquan(Beijing Beiye Functional Materials Corporation,Beijing 100192)

机构地区：[1]北京北冶功能材料有限公司,北京100192

出　　处：《金属材料研究》2021年第1期37-40,共4页Research on Metallic Materials

摘　　要：本文根据HB 5258-2000和GB/T 13303-91的测试方法,对GH5605合金在1000℃的抗氧化性能进行了研究。结果表明,氧化时间>50h时,GH5605合金氧化速率K^(+)<0.1g/m^(2)·h,抗氧化级别表现为完全抗氧化性;随着时间的延长,氧化膜的厚度呈增大趋势,且氧化深度越来越均匀;XRD分析表明,氧化膜主要成分为Cr_(2)O_(3)和Cr_(2)MnO_(4)。According to HB 5258-2000 and GB/T 13303-91,the oxidation resistance of GH5605 alloy at 1000℃ was studied.The results show that the oxidation rate K^(+) of GH5605 alloy is less than 0.1 g/m^(2)·h when the oxidation time is more than 50h.The thickness of the oxide film increases with the increase of time,and the oxidation depth becomes more and more uniform.XRD analysis shows that the oxide film is mainly composed of Cr_(2)O_(3) and Cr_(2)MnO_(4).

关 键 词：钴基 抗氧化 氧化膜 

分 类 号：TG1[金属学及工艺—金属学]