抑制二次电子发射方法的研究  

Study on Suppression of Secondary Electron Emission

作　　者：金雪莲 吴雪梅[1,2] 诸葛兰剑 金成刚 JIN Xuelian;WU Xuemei;ZHUGE Lanjian;JIN Chenggang(School of Physical Science and Technology,Soochow University,Soochow 215006,China;Provincial Key Laboratory of Thin Films,Soochow University,Soochow 215006,China;Soochow University Analysis and Testing Center,Soochow 215006,China;Laboratory for Space Environment and Physical Sciences,Harbin Institute of Technology,Harbin 150001,China)

机构地区：[1]苏州大学物理科学与技术学院,苏州215006 [2]江苏省薄膜材料重点实验室,苏州215006 [3]苏州大学分析测试中心,苏州215006 [4]哈尔滨工业大学空间环境与物质科学研究院,哈尔滨150001

出　　处：《材料导报》2021年第7期7176-7182,共7页Materials Reports

基　　金：国家自然科学基金(11505123,11435009)。

摘　　要：电介质和金属表面被激发出来的二次电子(Secondary electron emission,SEE)可以显著地改变该表面附近的电势分布和通量。在一些情况下,如电子束焊机、扫描电子显微镜、透射式电子显微镜、电子衍射仪、俄歇电子能谱仪、电子倍增管等应用中,二次电子的次级倍增效应得到很好的应用。然而在另一些情况下,例如射频放大器、粒子加速器和霍尔推进器、电子真空管、空间宇宙飞行器表面等应用中,二次电子会对仪器产生不利的影响。因此,抑制二次电子发射及研究减少二次电子产额(Secondary electron yield,SEY)是非常有意义的。现有的抑制二次电子发射的研究方法有外加偏置场法和表面处理法,其中通过外加电场或磁场来抑制二次电子的激发会对入射束流、束斑产生不利影响,因此表面处理法更具优势。表面处理法主要分为三类:表面陷阱构造(矩形以及三角形的凹槽、微孔结构、纤维结构、泡沫结构等)、表面镀膜(石墨烯膜、TiN膜等)、表面束流处理(激光刻蚀、磁控溅射法)。这些抑制二次电子激发的方法主要为了达到两个目的,一是减少物体表面的真二次电子的发射,二是捕获发射的二次电子,使之不能逃逸。本文总结了一些抑制二次电子激发的方法,比较不同方法或不同影响因素对二次电子的影响。Secondary electron emission(SEE)from dielectric and metal surface can significantly change the potential distribution and flux near the surface.In some cases,the secondary electron production has a positive effect,such as electron beam welder,scanning electron microscope,transmission electron microscope,electron diffractometer,auger electron spectrometer,electron multiplier tube and so on.However,in other cases,secondary electrons are not expected to be excited,such as RF-amplifiers,particle accelerators,hall thrusters,electron vacuum tubes,and on the surface of spacecraft in space.Therefore,the research on reducing secondary electron yield(SEY)is an active research field.The exis-ting research methods include the applied bias field method and the surface treatment method,and the applied electric or magnetic field to suppress the secondary electron will have an adverse effect on the incident beam and beam spot.Therefore,surface treatment method has more advantages,which can be divided into three categories:surface trap structure(rectangular and triangular groove,microporous structure,fiber structure,foam structure,etc.),surface coating(graphene film,TiN film,etc.),and surface beam treatment(laser etching,magnetron sputtering method).The main purpose of these methods of suppressing secondary electrons is either to reduce the emission of true secondary electrons from the surface,to capture the emitted secondary electrons so that they cannot escape,or both.This paper summarizes some methods to suppress the secondary electron and compares the effects of different methods or different factors on the secondary electron.

关 键 词：二次电子发射 表面构造 表面镀膜 离子束轰击 

分 类 号：O53[理学—等离子体物理]