Si基生长B掺杂ZnO纳米结构及ZnO掺杂应用  

Growth of Boron Doped ZnO Nanostructures on Silicon Substrate and Application of ZnO Doping

作　　者：支鹏伟 潘婧 胡轶 贾哲 方向明[1] 游秀芬[1] ZHI Pengwei;PAN Jing;HU Yi;JIA Zhe;FANG Xiangming;YOU Xiufen(Department of Materials and Chemical Engineering,Taiyuan University,Taiyuan 030032,China)

机构地区：[1]太原学院材料与化学工程系,山西太原030032

出　　处：《太原学院学报（自然科学版）》2021年第1期66-69,共4页Journal of TaiYuan University:Natural Science Edition

摘　　要：通过水热法将不同浓度的硼掺入氧化锌中,对掺杂样品的形成原理和晶格结构进行了分析。引用硼(B)源以水热的方法掺杂到氧化锌(ZnO)纳米棒中,通过扫描电镜(SEM)观察,掺杂后ZnO纳米棒直径发生明显变化。用X射线衍射法(XRD)进行分析,发现随着B掺杂浓度的增加,表现出多晶体和六方纤锌矿结构的ZnO的取向发生了变化,XRD曲线发现掺杂后的ZnO纳米棒主要取向为(002)方向,纳米棒结晶质量较好。不同B掺杂浓度的ZnO纳米棒XRD图谱有明显变化,说明B的掺入使纳米棒的晶格变小。分析了ZnO纳米棒的生长机制,讨论了B对溶液中反应体系的影响,为B掺杂ZnO在应用领域上的研究提供了基础,在此基础上,进一步研究掺杂ZnO在不同领域的应用。The formation principle and lattice structure of doped samples were analyzed by adding boron with different concentration into zinc oxide by hydrothermal method.Boron(b)source was used to doped ZnO nanorods by hydrothermal method.The diameter of ZnO nanorods changed significantly by SEM.The results of XRD show that the orientation of ZnO with the increase of boron doping concentration has changed.XRD curve shows that the orientation of ZnO nanorods is(002)and the crystal quality of the nanorods is better.The XRD spectra of ZnO nanorods with different B doping concentration have obvious changes,which indicates that the lattice of nanorods decreases with the addition of B.The growth mechanism of ZnO nanorods was analyzed,and the effect of B on the reaction system in solution was discussed.It provided a basis for further study on the application of B-doped ZnO in the field of application.On this basis,the application of doped ZnO in different fields was further studied.

关 键 词：氧化锌(ZnO) 水热法 硼掺杂 

分 类 号：TN7[电子电信—电路与系统]