Robust transport of charge carriers in in-plane 1T′-2H MoTe_(2) homojunctions with ohmic contact  

作　　者：Donglin Lu Zhenqing Li Congsheng Xu Siwei Luo Chaoyu He Jun Li Gang Guo Guolin Hao Xiang Qi Jianxin Zhong 

机构地区：[1]Hunan Key Laboratory for Micro-Nano Energy Materials and Devices,Laboratory for Quantum Engineering and Micro-Nano Energy Technology,and School of Physics and Optoelectronics,Xiangtan University,Hunan,411105,China

出　　处：《Nano Research》2021年第5期1311-1318,共8页纳米研究（英文版）

基　　金：This work was supported by the Grants from National Natural Science Foundation of China(No.11874316);Scientific Research Fund of Hunan Provincial Education Department(No.18A059);the Hunan Provincial Innovation Foundation for Postgraduate(No.CX2018B321);the Project of Xiangtan Science and Technology Bureau(No.CXY-ZD20172002);Innovative Research Team in University(No.IRT 17R91).

摘　　要：Metal-semiconductor ohmic contacts are required to reduce the energy dissipation for two-dimensional (2D) electronic devices, and phase engineering of 2D transition-metal dichalcogenides (TMDCs) is a promising approach for building ohmic contacts. Here, 2D in-plane 1T′-2H MoTe2 homojunctions were prepared by direct epitaxy via vapor deposition. The interface properties of in-plane 1T′-2H MoTe2 homojunction were investigated in detail by combining experiments, calculations and theories. The ohmic contact properties of 1T′-2H MoTe2 homojunction were proved according to Kelvin force probe microscopy and density functional theory calculations. The charge carriers robust transport in in-plane 1T′-2H MoTe2 homojunction without Fermi-level pinning can be well described by Poisson equation and band alignment. These results indicate that phase engineering of 2D TMDCs is promising to construct ohmic contacts for device applications.

关 键 词：1T′-2H MoTe_(2)homojunction ohmic contact surface potential built-in potential 

分 类 号：TN30[电子电信—物理电子学]