Magnetoresistance and Kondo Effect in Nodal-Line Semimetal VAs_(2)  

作　　者：Shuijin Chen Zhefeng Lou Yuxing Zhou Qin Chen Binjie Xu Chunxiang Wu Jianhua Du Jinhu Yang Hangdong Wang Minghu Fang 陈水金;娄哲丰;周宇星;陈琴;许彬杰;吴春翔;杜建华;杨金虎;王杭栋;方明虎(Department of Physics,Zhejiang University,Hangzhou 310027,China;Department of Applied Physics,China Jiliang University,Hangzhou 310018,China;Department of Physics,Hangzhou Normal University,Hangzhou 310036,China;Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China)

机构地区：[1]Department of Physics,Zhejiang University,Hangzhou 310027,China [2]Department of Applied Physics,China Jiliang University,Hangzhou 310018,China [3]Department of Physics,Hangzhou Normal University,Hangzhou 310036,China [4]Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing 210093,China

出　　处：《Chinese Physics Letters》2021年第1期92-98,共7页中国物理快报（英文版）

基　　金：Supported by the National Key R&D Program of China(Grant No.2016YFA0300402);the National Natural Science Foundation of China(Grant Nos.12074335 and 11974095);the Zhejiang Natural Science Foundation(Grant No.LY16A040012);the Fundamental Research Funds for the Central Universities。

摘　　要：We performed calculations of the electronic band structure and the Fermi surface,measured the longitudinal resistivity ρxx(T,H),Hall resistivity ρxy(T,H),and magnetic susceptibility as a function of temperature at various magnetic fields for VAs_(2) with a monoclinic crystal structure.The band structure calculations show that VAs_(2) is a nodal-line semimetal when spin-orbit coupling is ignored.The emergence of a minimum at around11 K in ρxx(T) measured at H=0 demonstrates that some additional magnetic impurities(V^(4+),S=1/2)exist in VAs_(2) single crystals,inducing Kondo scattering,evidenced by both the fitting of ρxx(T) data and the susceptibility measurements.It is found that a large positive magnetoresistance(MR) reaching 649% at 10 K and 9 T,its nearly quadratic field dependence,and a field-induced up-turn behavior of ρxx(T) also emerge in VAs_(2),although MR is not so large due to the existence of additional scattering compared with other topological nontrivial/trivial semimetals.The observed properties are attributed to a perfect charge-carrier compensation,which is evidenced by both the calculations relying on the Fermi surface and the Hall resistivity measurements.These results indicate that the compounds containing V(3d^(3)4s^(2)) element can be as a platform for studying the influence of magnetic impurities to the topological properties.

关 键 词：resistance KONDO resistivity 

分 类 号：O469[理学—凝聚态物理]