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作 者:李军显 李毅[1,2] 周建忠[1] 赵文晴 范丽娜 LI Junxian;LI Yi;ZHOU Jianzhong;ZHAO Wenqing;FAN Lina(School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China;Shanghai Key Laboratory of Modern Optical Systems,Shanghai 200093,China)
机构地区:[1]上海理工大学光电信息与计算机工程学院,上海200093 [2]上海市现代光学系统重点实验室,上海200093
出 处:《电子元件与材料》2021年第4期316-322,共7页Electronic Components And Materials
基 金:国家高技术研究发展计划(863计划)(2006AA03Z348);教育部科学技术研究重点项目(207033);上海市科学技术委员会科技攻关计划(06DZ11415);上海市教育委员会科研创新计划重点项目(10ZZ94);上海市领军人才培养计划(2011-026)。
摘 要:基于溶胶凝胶旋涂法和后退火工艺在石英玻璃基底上制备了高质量的V2 O5薄膜,研究其相变光学特性和电学特性。通过X射线衍射(XRD)和扫描电子显微镜(SEM)分析了V2 O5薄膜的晶体结构和形貌,利用XPS图谱分析了V2 O5薄膜的组分。在不同偏压和不同温度下测试分析了V2 O5薄膜的光电特性和相变特性,结果表明室温下V2 O5薄膜在300~2000 nm波长范围的光学透过率达60%,薄膜在发生相变前后光学透过率有明显的变化,当升温到231℃时,V2 O5薄膜在900~1600 nm近红外波长范围内的光学透过率平均降低了18%,电阻发生了3个数量级的变化,不同温度下的热滞回线也表明薄膜具有良好的可逆相变光电特性。Here a high-quality V2 O5 film was prepared on quartz substrate by sol-gel spin coating method,which was then post-annealed.Its optical and electrical properties were studied during thermally induced phase transition.The crystal structure and morphology of the V2 O5 film were analyzed by X-ray diffraction(XRD)and scanning electron microscopy(SEM).And the composition of the V2 O5 film was analyzed by XPS patterns.The optical,electrical properties and phase transition of the V2 O5 film were characterized under different bias voltages and temperatures.The results show that the optical transmittance of the V2 O5 film is 60%from 300 to 2000 nm at room temperature.There is an obvious change in the optical transmittance during the phase transition.When temperature is higher than 231℃,the near-infrared transmittance of V2 O5 film from 900 to 1600 nm is averagely reduced by 18%with resistance changes by 3 orders of magnitude.The thermal hysteresis loops also shows that the film has good photoelectric properties during the reversible phase transition.
关 键 词:V_(2)O_(5)薄膜 溶胶凝胶 热致相变 光学透过率 电阻
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