钼铜真空开关触头材料渗铜工艺的优化  

Optimization of Copper Infiltration Process for Mo-Cu Vacuum Switch Contact Material

作　　者：曹兆红 金向儒 李涛 曾甲牙 CAO Zhaohong;JIN Xiangru;LI Tao;ZENG Jiaya(Shaanxi Zhongtian Rocket Technology Co.,Ltd.,Xi'an 710025,China)

机构地区：[1]陕西中天火箭技术股份有限公司,西安710025

出　　处：《电工材料》2021年第2期3-5,共3页Electrical Engineering Materials

摘　　要：采用粉末冶金法压制、烧结和熔渗工艺制备钼铜真空开关触头材料,时而会出现钼基体表面氧化黄斑点和渗铜分布不均或钼晶粒间铜相填充不均现象。为了提高钼渗铜工艺效果,在常规钼渗铜工艺基础上,低温熔渗增加一段还原温度、时间梯度段。结果表明,通过优化改进钼渗铜工艺后,钼铜触头产品质量得到了有效控制。Molybdenum-copper vacuum switch contact materials prepared by pressing,sintering and infiltration processes are produced by powder metallurgy.Sometimes,yellow spots on the surface of molybdenum matrix and uneven distribution of infiltrated copper or uneven filling of copper phase between molybdenum grains occur.In order to improve the effect of Mo-Cu infiltration process,on the basis of conventional Mo-Cu infiltration process,a reduction temperature and time gradient section are added for low-temperature infiltration.The results show that the quality of Mo-Cu contact has been effectively controlled by optimizing and improving Mo-Cu infiltration process.

关 键 词：钼铜触头材料 粉末冶金 渗铜工艺 

分 类 号：TB33[一般工业技术—材料科学与工程]