Tuning Thermal Conductivity in Si Nanowires with Patterned Structures  

作　　者：Gui-ping Zhu Chang-wei Zhao Xi-wen Wang Jian Wang 朱桂萍;赵长伟;王希稳;王健(College of Physical Science and Technology,Yangzhou University,Yangzhou 225002,China)

机构地区：[1]College of Physical Science and Technology,Yangzhou University,Yangzhou 225002,China

出　　处：《Chinese Physics Letters》2021年第2期41-45,共5页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant No.11875047).

摘　　要：Tuning the thermal conductivity of silicon nanowires(Si-NWs)is essential for realization of future thermoelectric devices.The corresponding management of thermal transport is strongly related to the scattering of phonons,which are the primary heat carriers in Si-NWs.Using the molecular dynamics method,we find that the scattering of phonons from internal body defects is stronger than that from surface structures in the low-porosity range.Based on our simulations,we propose the concept of an exponential decay in thermal conductivity with porosity,specifically in the low-porosity range.In contrast,the thermal conductivity of Si-NWs with a higher porosity approaches the amorphous limit,and is insensitive to specific phonon scattering processes.Our findings contribute to a better understanding of the tuning of thermal conductivity in Si-NWs by means of patterned nanostructures,and may provide valuable insights into the optimal design of one-dimensional thermoelectric materials.

关 键 词：NANOWIRES POROSITY CONDUCTIVITY 

分 类 号：TQ127.2[化学工程—无机化工] TB383.1[一般工业技术—材料科学与工程]