Cu-Sn-Cu互连微凸点电迁移仿真研究  

Simulation of micro bump electromigration in Cu-Sn-Cu interconnects

作　　者：张潇睿 Zhang Xiaorui(Aviation Engineering College,Civil Aviation Flight University of China,SichuanGuanghan 618307)

机构地区：[1]中国民用航空飞行学院航空工程学院,四川广汉618307

出　　处：《科技风》2021年第12期108-109,128,共3页

摘　　要：随着微电子领域朝着微型化的不断前进,产品封装密度越来越高,微焊点的尺寸和间距也日益减小,电迁移现象更加频繁的出现。本文针对一种Cu-Sn-Cu结构互连微凸点,基于ANSYS软件,研究了不同Sn层高度以及结构对称性变化对凸点内部电流密度分布的影响,得到了电流密度在不同结构下的分布规律,为实际电迁移实验研究提供了理论参考。With the miniaturization of the microelectronic products,packaging density is getting higher and higher,and the size and spacing of micro solder joints are also decreasing,electromigration occurs more frequently.This paper focuses on a Cu-Sn-Cu micro solder joints,the effects of different Sn layer thickness and structural symmetry on the current density distribution inside the bump are studied by using ANSYS.The distribution of current density in different structures was obtained,and it provides a theoretical reference for the experimental study of electromigration.

关 键 词：微凸点 电迁移 电流密度 仿真 

分 类 号：TN403[电子电信—微电子学与固体电子学]