外接电容对脉冲激光辐照Si-APD时的温升影响  

Effect of external capacitor on the temperature rise of Si avalanche photodiodes irradiated by pulsed laser

作　　者：陈良[1] 魏智[1] 王頔[1] 刘红旭 金光勇[1] CHEN Liang;WEI Zhi;WANG Di;LIU Hong-xu;JIN Guang-yong(The Key Laboratory of Jilin Province Solid-State Laser Technology and Application,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学吉林省固体激光技术及其应用重点实验室,吉林长春130022

出　　处：《激光与红外》2021年第4期460-464,共5页Laser & Infrared

基　　金：国家自然科学基金项目(No.61805024)资助。

摘　　要：硅基雪崩光电二极管(Si-APD)在实际应用中通常需要串联电容来滤除直流信号分量,以便于后续电路对脉冲信号进行提取和放大。另外,Si-APD吸收激光能量后往往导致自身的温升而影响了探测性能。基于此,本论文首次建立了毫秒脉冲激光辐照外接电容电路中Si-APD的热传导模型,并据此对Si-APD的表面温升特性开展了模拟仿真和实验研究。结果表明由于外接电容对回路中电流的阻碍作用,降低了Si-APD中p-n结内部的焦耳热,从而使得外接电容条件下的Si-APD表面温升小于无外接电容的情况,并且电容越小,Si-APD的温升越低。Si avalanche photodiode(Si-APD)usually need series capacitors in practical applications to filter out the DC component,so as to facilitate the subsequent circuit to extract and amplify the pulse signal.In addition,Si-APD often leads to its own temperature rise after absorbing laser energy,which affects the detection performance.Based on this,in this study,a theoretical model is proposed for Si-APD in an external capacitor circuit,irradiated by millisecond(ms)pulse laser.The surface temperature characteristics of the Si-APD were studied via simulations and experiments.The results show that the current in the circuit is affected by the capacitor,and the heat dissipation of the Joule heat source inside the p-n junction in the Si-APD is reduced.The temperature rise in the Si-APD with an external capacitor is smaller than that without an external capacitor,and the smaller the capacitor,the lower the surface temperature rise in the Si-APD.

关 键 词：外接电容 Si-APD P-N结 焦耳热 

分 类 号：O432.1[机械工程—光学工程]