填充方钴矿热电器件的结构优化设计与性能  

Structural Optimization Design and Performance of filled Skutterudite-Based Thermoelectric Devices

作　　者：张骐昊 刘睿恒 廖锦城[1] 夏绪贵[1] 王超[1] 柏胜强[1] 陈立东[1] ZHANG Qihao;LIU Ruiheng;LIAO Jincheng;XIA Xugui;WANG Chao;BAI Shengqiang;CHEN Lidong(State Key Laboratory of High Performance Ceramics and Superfine Microstructure,Shanghai Institute of Ceramics,Chinese Academy of Sciences,Shanghai 200050,China)

机构地区：[1]中国科学院上海硅酸盐研究所,高性能陶瓷和超微结构国家重点实验室,上海200050

出　　处：《硅酸盐学报》2021年第2期211-219,共9页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金重点项目(51632010,51972324);中科院青年促进会项目(2019253)。

摘　　要：基于热电器件全参数设计模型,设计并制备了具有不同拓扑结构的填充方钴矿器件,通过器件仿真模拟结果与实验数据的比对和分析,解析器件结构、界面、连接工艺等对器件输出性能的影响并建立其定量关系;使用批量合成的n型Yb_(0.3)Co_(4)Sb_(12)和p型Ce Fe_(3.85)Mn_(0.65)Sb_(12)填充方钴矿材料制备的单级器件最大转换效率达到9.8%,输出功率密度达1.42 W/cm2。The topologic structure of filled skutterudites(SKD)-based thermoelectric device was designed via full-parameter simulation.The influences of topologic structure factors and interfacial electrical resistance on the module output performance(i.e.,conversion efficiency and output power density)were investigated by numerical analysis.An 8-pair module with an optimized design was fabricated using p-type CeFe_(3.85) Mn_(0.15) Sb_(12) and n-type Yb_(0.3) Co_(4) Sb_(12) filled skutterudites.The maximum conversion efficiency and output power density are 9.8%and 1.42 W/cm2,respectively.

关 键 词：热电器件 结构设计 填充方钴矿 转换效率 

分 类 号：TQ174[化学工程—陶瓷工业]