结构优化的异质Ca(Mg_(1/3)Ta_(2/3))O_(3)/CaTiO_(3)薄膜介电性能  

Dielectric Properties of Structurally Optimized Heterogenous Ca(Mg_(1/3)Ta_(2/3))O_(3)/CaTiO_(3) Thin Films

作　　者：李润润 李月明 闫朝一 包亦望[2] 孙华君[3] 胡灏溔 李宁益 LI Runrun;LI Yueming;YAN Chaoyi;BAO Yiwang;SUN Huajun;HU Haoyao;LI Ningyi(School of Material Science and Engineering,Jingdezhen Ceramic Institute,Jingdezhen 333001,Jiangxi,China;National Key Laboratory of Green Building Materials,China Building Materials Academy,Beijing 100024,China;State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,School of Materials Science and Engineering,Wuhan University of Technology,Wuhan 430070,China;Tuozhou Construction Company Limited,Ganzhou 341000,Jiangxi,China)

机构地区：[1]景德镇陶瓷大学材料科学与工程学院,江西景德镇333001 [2]中国建筑材料科学研究总院,绿色建筑材料国家重点实验室,北京100024 [3]武汉理工大学材料材料科学与工程学院,复合新技术国家重点实验室,武汉430070 [4]拓洲建设股份有限公司,江西赣州341000

出　　处：《硅酸盐学报》2021年第1期174-179,共6页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51472227);江西省教育厅科技项目(GJJ170800);景德镇科技局项目(2017GYZD019-014);江西省科技厅计划项目(20192BBHL80007);绿色建筑材料国家重点实验室开放基金;景德镇陶瓷大学博士科研启动基金。

摘　　要：采用Pechini方法,在Pt/Ti/SiO_(2)/Si(100)基板上沉积了均质Ca(Mg1/3Ta2/3)O3 (CMT),CaTiO_(3)(CT)和堆叠次序不同以及摩尔比不同的异质Ca(Mg_(1/3)Ta_(2/3))O_(3)/CaTiO_(3)(CMT/CT)薄膜。结果表明:以CT为底层的异质CMT/CT薄膜可以形成单一的钙钛矿结构,以CMT为底层的异质薄膜则有杂相产生。对于以CT为底层的不同摩尔比的异质CMT/CT薄膜,随着CMT含量的增加,异质薄膜中CT的衍射峰逐渐减小至消失,而CMT的结晶度变得更强,这说明以CT为缓冲层将有助于上层的CMT形成钙钛矿相。介电性能研究表明:异质CMT/CT薄膜的介电常数高度依赖于CMT的含量,而介电损耗不但与CMT含量有关,还与异质薄膜中界面数有关。当n(CMT):n(CT)=1:1 (摩尔比)时,异质的CMT/CT薄膜的介电常数和损耗分别为56和0.038。The homogeneous Ca(Mg_(1/3)Ta_(2/3))O_(3)/CaTiO_(3)(CMT), CaTiO_(3)(CT) dielectric thin films and heterogeneous CMT/CT films with different stacking sequences and different mole ratios of CMT and CT were deposited on Pt/Ti/SiO_(2)/Si(100) substrates by a Pechini method, respectively. The results show that the hetero-layered CMT/CT films with CT film as the first layer have single perovskite phase. However, a secondary phase diffraction peaks appear in the hetero-layered CMT/CT films with CMT film as the first layer. Meanwhile, the CT peak gradually weakens and finally disappears with increasing CMT mole ratio in the hetero-layered CMT/CT films with CT film as the first layer, indicating CT favored the CMT forming perovskite phase. The dielectric property characterizations show that the dielectric constant is highly dependent upon the mole ratio of CMT in hetero-layered CMT/CT films. However, the dielectric loss is not only dependent on the mole ratio of CMT, but also the interface number of CMT/CT thin films. The optimized dielectric constant and loss were found to be 56 and 0.038 under the mole ratio of 1:1 for CMT to CT, respectively.

关 键 词：薄膜 异质界面 微观结构 介电性能 

分 类 号：TQ174[化学工程—陶瓷工业]