六方氮化硼薄膜对石墨烯-碳化硅结构近场热辐射的增强  

Enhancement of Near-Field Thermal Radiation in Graphene-Silicon Carbide Structures by Hexagonal Boron Nitride Thin Films

作　　者：王波[1] 张纪红 李聪颖 WANG Bo;ZHANG Ji-Hong;LI Cong-Ying(School of Mechanical and Automotive Engineering,Yantai University,Yantai 264005,China)

机构地区：[1]烟台大学机电汽车工程学院,烟台264005

出　　处：《工程热物理学报》2021年第4期966-972,共7页Journal of Engineering Thermophysics

基　　金：国家自然科学基金资助项目(No.11604285);山东省自然科学基金项目资助(No.ZR2016FQ11)。

摘　　要：六方氮化硼(hBN)具有跟石墨烯类似的层状结构和晶格参数,研究发现hBN薄膜具有良好的热传导、电绝缘、光学和力学等性能。本文从理论上研究了hBN薄膜对石墨烯-碳化硅(G/S)结构的近场热辐射的影响。研究发现在红外频段.hBN薄膜在低频率区和高频率区会增强G/S结构的近场热辐射,经计算在G/S结构中加入厚度为10 nm的hBN薄膜时获得的辐射热流是同物理条件下G/S结构的1.5倍;而在中频率区hBN薄膜的厚度阻碍了石墨烯表面等离激元和碳化硅表面声子极化激元的耦合,使得近场热辐射热流随hBN薄膜厚度增加而逐渐减弱。本研究的结果可为下一步实验与应用中对hBN薄膜厚度的选择提供理论基础。The layered structure and lattice parameters of hexagonal boron nitride(hBN) are similar to those of graphene.hBN films have been reported with good thermal conductivity,electrical insulation,optical and mechanical properties.In this paper,we theoretically investigated the effect of hBN thin film on near-field thermal radiation of graphene-silicon carbide(G/S)structure.The results reveal that in infrared frequency band,the near-field thermal radiation of G/S structure was significantly enhanced by hBN film in the low frequency region and high frequency region.The heat flow of thermal radiation with hBN film of thickness-10 nm was 1.5 times as many as that of the G/S structure without hBN film.However,the hBN film prevents the coupling of the phonon polaron between graphene and silicon carbide in the middle frequency region,so that the heat flux of the near-field thermal radiation gradually weakens when the hBN film thickens.The results of this study can provide a theoretical foundation for experimental and applicable hBN in the future.

关 键 词：六方氮化硼 近场热辐射 薄膜厚度 石墨烯 

分 类 号：TK124[动力工程及工程热物理—工程热物理]