低结晶度NiMn_(2)O_(4)/还原氧化石墨烯复合材料的制备及其超级电容性能  

Preparation of Low Crystallinity NiMn_(2)O_(4)/reduced Graphene Oxide Composite and Its Supercapacitor Properties

作　　者：李明伟[1] 杨绍斌[1] LI Mingwei;YANG Shaobin(College of Materials Science and Engineering,Liaoning Technical University,Fuxin 123000,Liaoning,China)

机构地区：[1]辽宁工程技术大学材料科学与工程学院,辽宁阜新123000

出　　处：《硅酸盐学报》2021年第3期503-510,共8页Journal of The Chinese Ceramic Society

基　　金：国家自然科学基金(51274119)。

摘　　要：采用溶剂热法制备了NiMn_(2)O_(4)/还原氧化石墨烯(NiMn_(2)O_(4)/r GO)复合材料,并对表面形貌、微观结构和电化学性能进行了表征和测试。结果表明:低结晶度的NiMn_(2)O_(4)以丝绒状均匀地沉积在rGO纳米片上,几乎没有rGO裸露在外,NiMn_(2)O_(4)纳米颗粒间的聚集现象消失;同时NiMn_(2)O_(4)的覆盖也有效地阻止了石墨烯层之间的团聚。由于其独特的结构,NiMn_(2)O_(4)/r GO具有较大的比表面积和良好的导电性。在1 A·g^(–1)时的比电容是1 675 F·g^(–1)。在5 A·g^(–1)时,经过2 000个充放电循环后,NiMn_(2)O_(4)/r GO的比电容保持率为91%。A composite with low crystallinity nickel manganate(NiMn_(2)O_(4)) on reduced graphene oxide(rGO) was synthesized by a solvothermal method. Velvet-like NiMn_(2)O_(4) was deposited evenly on rGO nanosheets. The coverage of NiMn_(2)O_(4) effectively prevents agglomeration between graphene flakes. The NiMn_(2)O_(4)/rGO composite has a large specific surface area and an excellent electrical conductivity due to the unique structure, and the specific capacitance is 1 675 F·g^(–1) at 1 A·g^(–1). The specific capacitance retention rate of NiMn_(2)O_(4)/rGO nanoflowers composite is 91% at 5 A·g^(–1) after 2 000 cycles.

关 键 词：锰酸钴 还原氧化石墨烯 超级电容器 复合材料 

分 类 号：TM53[电气工程—电器] TB332[一般工业技术—材料科学与工程]