Interface engineering of ferroelectric-gated MoS_(2) phototransistor  

作　　者：Shuaiqin WU Xudong WANG Wei JIANG Luqi TU Yan CHEN Jingjing LIU Tie LIN Hong SHEN Jun GE Weida HU Xiangjian MENG Jianlu WANG Junhao CHU 

机构地区：[1]State Key Laboratory of Infrared Physics,Shanghai Institute of Technicpl Plhysics,Chinese Academy of Sciences,Shanghai 200083,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Hangzhou Institute for Advanced Study,University of Chinese Academy of Sciences,Hangzhou 310024,China

出　　处：《Science China(Information Sciences)》2021年第4期162-169,共8页中国科学（信息科学）（英文版）

基　　金：supported by National Natural Science Foundation of China(Grant Nos.61835012,61905267,61974153,62025405);Projects of International Cooperation and Exchanges NSFC(Grant No.62011530043);Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB44020100);Key Research Program of Frontier Sciences,CAS(Grant No.ZDBS-LY-JSC045);Shanghai Sailing Program(Grant No.19YF1454900)。

摘　　要：Two-dimensional(2D)layered materials have received significant attention owing to their unique crystal structures as well as outstanding optical and electric properties in photoelectric detection.However,most 2D materials are very sensitive to the environment.Adsorbates and traps introduced during the preparation process have a negative effect on the performance of devices based on these materials.Here,we focus on a molybdenum disulfide(MoS2)phototransistor gated by ferroelectrics,and insert a hexagonal boron nitride(h-BN)layer between MoS2 and the ferroelectric film to improve the interface.To clarify the role of h-BN in this device,two parallel devices are prepared on the same MoS_(2) flake.One device is covered with h-BN,while the other is in direct contact with the ferroelectric film.The electronic and optoelectronic properties of these two devices are then measured and compared.Experimental results reveal that,compared to device without h-BN,the MoS_(2) phototransistor with h-BN exhibits higher carrier mobility(average value:85 cm^(2)·V^(-1)·s^(-1) and highest value:185 cm^(2)·V^(-1)·s^(-1)),larger responsivity(85 A·W-1),and larger detectivity(1.76×10^(13) Jones).Thus,this strategy is significant for the interface engineering and performance improvement of devices based on 2D materials.

关 键 词：2D materials ferroelectrics MoS_(2)phototransistors H-BN interface engineering 

分 类 号：TN15[电子电信—物理电子学]