喷墨打印PVP绝缘层柔性薄膜晶体管研究  

PVPInkjet printing PVP dielectric for flexible thin film transistor

作　　者：陶洪 罗浩德 宁洪龙 姚日晖[2] 蔡炜 郑喜凤 汪洋 王铂 曹慧 彭俊彪[2] TAO Hong;LUO Hao-de;NING Hong-long;YAO Ri-hui;CAI Wei;ZHENG Xi-feng;WANG Yang;WANG Bo;CAO Hui;PENG Jun-biao(Institute of Polymer Optoelectronic Materials and Devices,Guangzhou NewVision Optoelectronic Technology Co.,Ltd.,Guangzhou 510530,China;Institute of Polymer Optoelectronic Materials and Devices,South China University of Technology,Guangzhou 510640,China;Ji Hua Laboratory,Foshan 528000,China;Changchun Cedar Electronics Technology Co.,Ltd.,Changchun 130103,China)

机构地区：[1]广州新视界光电科技有限公司,广东广州510530 [2]华南理工大学高分子光电材料及器件研究所,广东广州510640 [3]季华实验室,广东佛山528000 [4]长春希达电子技术有限公司,吉林长春130103

出　　处：《液晶与显示》2021年第5期633-640,共8页Chinese Journal of Liquid Crystals and Displays

基　　金：广东省重点领域研发计划(No.2020B010183002);国家自然科学基金(No.51771074,No.62074059);广东省基础与应用基础研究重大项目(No.2019B030302007);中央高校基本科研业务费专项资金(No.2020ZYGXZR060,No.2019MS012);季华实验室自主立项项目(No.X190221TF191)。

摘　　要：柔性电子设备的快速发展对薄膜晶体管(TFT)提出了低功耗、耐弯折和可低温制备的要求。其中,栅极绝缘层是核心材料之一。溶液法制备有机栅极绝缘层具有低成本、柔韧性强的优点,适合大面积加工。本文采用喷墨打印法实现了聚乙烯吡咯烷酮(PVP)墨水的印刷成膜,采用XPS分析了不同退火温度处理的印刷PVP薄膜成分差异,并测试了PVP器件的漏电流、电容和转移特性参数。200℃退火的PVP薄膜漏电流密度≤10^(-4)A/cm^(2)(5 V),相对介电常数约为3.8,玻璃衬底器件饱和迁移率达到4.6 cm^(2)/(V·s),开关比≥10^(5);PI柔性衬底器件在20 mm弯折半径下迁移率2.8 cm^(2)/(V·s),开关比约6×10^(4),在柔性电子领域有一定的应用前景。Rapid development of flexible electronics requires thin film transistor(TFT)to have features of low power consumption,good bending resistance and ability to be fabricated at low temperature.Gate insulator is one of the key materials in TFT device.Organic gate insulator prepared by solution method has the advantages of low cost,strong flexibility and is suitable for large area processing.In this paper,polyvinylpyrrolidone(PVP)dielectric film was achieved by inkjet printing process.The composition difference of printed PVP films with different annealing temperature was analyzed by XPS,and leakage current,capacitance and transfer characteristic of PVP devices were obtained by semiconductor analyzer.TFT device with PVP film annealed at 200℃showed leakage current density≤10^(-4)A/cm^(2)(5 V)and relative dielectric constant about 3.8.Saturation mobility of device based on glass substrate is 4.6 cm^(2)/(V·s)and the Ion/Ioffratio is≥10^(5) while that for device based on PI substrate with bending radius of 20 mm is 2.8 cm^(2)/(V·s)and 6×10^(4),respectively.This result demonstrates that PVP dielectric is promising in flexible electronics.

关 键 词：喷墨打印 柔性衬底 有机绝缘材料 薄膜晶体管 

分 类 号：TN27[电子电信—物理电子学]