基于GaAs PHEMT工艺的60~90GHz功率放大器MMIC  

60-90 GHz Power Amplifier MMIC Based on GaAs PHEMT Process

作　　者：孟范忠[1] 薛昊东 方园[1] Meng Fanzhong;Xue Haodong;Fang Yuan(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第3期193-197,共5页Semiconductor Technology

摘　　要：研制了一款60~90 GHz功率放大器单片微波集成电路(MMIC),该MMIC采用平衡式放大结构,在较宽的频带内获得了平坦的增益、较高的输出功率及良好的输入输出驻波比(VSWR)。采用GaAs赝配高电子迁移率晶体管(PHEMT)标准工艺进行了流片,在片测试结果表明,在栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,功率放大器MMIC的小信号增益大于13 dB,在71~76 GHz和81~86 GHz典型应用频段,功率放大器的小信号增益均大于15 dB。载体测试结果表明,栅极电压为-0.3 V、漏极电压为+3 V、频率为60~90 GHz时,该功率放大器MMIC饱和输出功率大于17.5 dBm,在71~76 GHz和81~86 GHz典型应用频段,其饱和输出功率可达到20 dBm。该功率放大器MMIC尺寸为5.25 mm×2.10 mm。A 60-90 GHz power amplifier monolithic microwave integrated circuit(MMIC)was researched and developed.The MMIC adopted a balanced amplifier structure to achieve flat gain,higher output power and good input and output voltage standing wave ratio(VSWR)in a wide frequency band.The MMIC was fabricated with GaAs pseudomorphic high electron mobility transistor(PHEMT)standard process.The on-wafer test results show that the small-signal gain of the power amplifier MMIC is higher than 13 dB from 60 GHz to 90 GHz,and even higher than 15 dB both in 71-76 GHz and 81-86 GHz,when the gate voltage is-0.3 V and the drain voltage is+3 V.The on-carrier test results show that the saturate output power of the power amplifier MMIC is higher than 17.5 dBm,when the gate voltage is-0.3 V and the drain voltage is+3 V from 60 GHz to 90 GHz.In the typical application frequency bands of 71-76 GHz and 81-86 GHz,the saturate output power reaches 20 dBm.The size of the MMIC power amplifier chip is 5.25 mm×2.10 mm.

关 键 词：GaAs赝配高电子迁移率晶体管(PHEMT) 功率放大器(PA) 平衡式放大器 单片微波集成电路(MMIC) E波段 

分 类 号：TN43[电子电信—微电子学与固体电子学]