一种用于高压PMOSFET驱动器的电压跟随电路  

A Voltage Following Circuit for the High Voltage PMOSFET Driver

作　　者：师翔 崔玉旺 赵永瑞 谭小燕[1,3] 张浩 贾东东 Shi Xiang;Cui Yuwang;Zhao Yongrui;Tan Xiaoyan;Zhang Hao;Jia Dongdong(North-China Integrated Circuit Co.,Ltd.,Shijiazhuang 050200,China;The 13th Research Institute,CETC,Shijiazhuang 050051,China;Key Laboratory of Radio Frequency Integrated Circuit for Mobile Communication in Hebei Province,Shijiazhuang 050200,China)

机构地区：[1]河北新华北集成电路有限公司,石家庄050200 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]河北省移动通信用射频集成电路重点实验室,石家庄050200

出　　处：《半导体技术》2021年第3期198-202,222,共6页Semiconductor Technology

摘　　要：通常PMOSFET栅源电压为-20~20 V,而用于GaN功率放大器的高压PMOSFET驱动器,其工作电压为28~50 V,因此需要一种新型电路结构来保证PMOSFET栅源电压工作在额定范围。设计了一种新型电压跟随电路,采用新型多环路负反馈结构,核心电路主要为电压基准单元、减法器单元、误差放大器单元和采样单元,可产生稳定的跟随电压。该电路具有宽电源电压范围、高输出稳定性以及低温度漂移等特性。基于0.5μm BCD工艺对电路进行流片,测试结果表明,采用该电路的驱动器芯片,其电源电压为15~50 V,输出电压变化量约为0.6 V,在-55~125℃温度范围内,电压漂移量约为0.12 V,满足大多数PMOSFET栅源电压的应用要求。The gate-source voltage of most PMOSFETs is from-20 V to 20 V,while the high vol-tage PMOSFET drivers for GaN power amplifier operate at 28-50 V,so a novel circuit structure is needed to ensure the gate-source voltage operating in the rated voltage range.A novel voltage following circuit with the multi-loop negative feedback structure was designed,and the core circuit mainly consisted of voltage reference unit,subtractor unit,error amplifier unit and sampling unit.The designed circuit can generate stable following voltages,and has a wide power supply voltage range,high output stability and low temperature drift.The circuit was taped out based on 0.5μm BCD process.The test results show that the driver chip using the designed circuit operates properly at the power supply voltages of 15-50 V,the output voltage variation is about 0.6 V and the voltage drift is about 0.12 V in the temperature range of-55-125℃,which meets the application requirments of gate-source voltage of most PMOSFETs.

关 键 词：PMOSFET驱动器 栅源电压 电压跟随电路 多环路负反馈 低温度漂移 

分 类 号：TN432[电子电信—微电子学与固体电子学]