Effect of sintering temperature on the chemical bonding,electronic structure and electrical transport properties of β-Ga_(1.9)Fe_(0.1)O_(3) compounds  

作　　者：Swadipta Roy C.V.Ramana 

机构地区：[1]Center for Advanced Materials Research(CMR),University of Texas at El Paso,El Paso,500 W University Ave,El Paso,TX,79968,United States

出　　处：《Journal of Materials Science & Technology》2021年第8期135-144,共10页材料科学技术（英文版）

基　　金：support from the National Science Foundation(NSF)with grant#DMR-1827745。

摘　　要：A model system,which is based on iron(Fe)doped gallium oxide(Ga_(2)O_(3))(Ga_(1.9)Fe_(0.1)O_(3)),has been considered to elucidate the combined effect of transition-metal ion doping and processing temperature on the chemistry,local structure and chemical bonding,and electrical transport properties of a wide band gap oxide(Ga_(2)O_(3)).The Ga_(1.9)Fe_(0.1)O_(3) compounds were synthesized using standard high-temperature solid state reaction method.The effect of processing conditions in terms of different calcination and sintering environments on the structural and electrical properties of Ga_(1.9)Fe_(0.1)O_(3) compounds is studied in detail.Structural characterization by Raman spectroscopy revealed that Ga_(1.9)Fe_(0.1)O_(3) compounds exhibit monoclinic crystal symmetry,which is quite similar to the intrinsic parental crystal structure,though Fedoping induces lattice strain.Sintering temperature(T_(sint))which was varied in the range of 900-1200℃,has significant impact on the structure,chemical bonding,and electrical properties of Ga_(1.9)Fe_(0.1)O_(3) compounds.Raman spectroscopic measurements indicate the proper densification of the Ga_(1.9)Fe_(0.1)O_(3) compounds achieved through complete Fe diffusion into the parent Ga_(2)O_(3) lattice which is evident at the highest sintering temperature.The X-ray photoelectron spectroscopy validates the chemical states of the constituent elements in Ga_(1.9)Fe_(0.1)O_(3) compounds.The electrical properties of Ga_(1.9)Fe_(0.1)O_(3) fully controlled by T_(sint),which governed the grain size and microstructural evolution.The temperature and frequency dependent electrical measurements demonstrated the salient features of the Fe doped Ga_(2)O_(3) compounds.The activation energy determined from Arrhenius equation is 0.5 e V.The results demonstrate that control over structure,morphology,chemistry and electrical properties of the Ga_(1.9)Fe_(0.1)O_(3) compounds can be achieved by optimizing T_(sint).

关 键 词：Ga_(2)O_(3)compounds FE-DOPING Raman spectroscopy Chemical bonding Electrical properties 

分 类 号：TQ133.51[化学工程—无机化工]