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作 者:张世鑫 赵爽[1] 王一璋 周哲海[1] ZHANG Shixin;ZHAO Shuang;WANG Yizhang;ZHOU Zhehai(School of Instrument Science and Opto Electronics Engineering, Beijing Information Science and Technology University, Beijing 100192, China;Beijing Surlaser Technologies Co. Ltd., Beijing 100085, China)
机构地区:[1]北京信息科技大学仪器科学与光电工程学院,北京100192 [2]北京盛想科技有限公司,北京100085
出 处:《激光技术》2021年第3期357-361,共5页Laser Technology
基 金:北京市教育委员会科技计划资助项目(KM201811232007);北京市长城学者支持计划资助项目(CIT&TCD20190323);北京信息科技大学勤信学者支持计划资助项目(QXTCPA201701)。
摘 要:为了获得高均匀性、对称性及一些特殊形状强度分布的白光发光二极管(LED)光束以满足某些特定的需求,基于白光LED光源为朗伯光源的特性,运用自由曲面透镜的方法对LED光束进行了光束整形,分别采用单一自由曲面透镜以及全内反射(TIR)透镜与微透镜阵列组合两种不同的整形结构,进行了加工工艺和原理理论分析,并通过了实验验证。结果表明,实验得到的圆形均匀光斑,其总光线利用率高达96%,有效面积光线利用率为88.4%;得到的矩形均匀光斑,总光线利用率为91%,有效面积光线利用率为78.7%,光束均匀度均在60%以上;通过自由曲面透镜方法进行白光LED光束整形效果极佳。该整形方法为白光LED光源的进一步广泛应用提供了重要的指导。In order to obtain white light-emitting diode(LED)beams with high uniformity,symmetry and some special shape and intensity distribution to meet certain specific needs,based on the characteristics of white LED light source as lambert light source,the LED beam was shaped by using free-form curved lens method.Two different shaping structures were respectively adopted:Single free-form curved lens and total internal reflection(TIR)lens and microlens array.The processing technology and theoretical analysis were carried out followed by further experiments.The circular uniform spot and rectangular uniform spot were obtained by the experiment.The total light utilization rate of the circular uniform spot is as high as 96%,and the effective light utilization rate of the effective area is 88.4%.The total utilization rate of the rectangular uniform spot is 91%,the effective light utilization rate of the effective area is 78.7%,and the uniformity of the beam is above 60%,respectively.The results show that the method of free surface lens is very effective in shaping the white LED beam.This method provides important guidance for the further wide application of white LED light source.
关 键 词:光学设计 白光发光二极管 光束整形 二次配光 自由曲面透镜 微透镜阵列
分 类 号:TN202[电子电信—物理电子学] TN312
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