大面积α-MoO_(3)的制备及其存储计算研究进展  

Recent advances in synthesis and memory computing of large-area α-MoO3

作　　者：单欣 王芳 †胡凯 魏俊青 林欣 赵轩宇 周宝增 张楷亮 Shan Xin;Wang Fang;Hu Kai;Wei Jun-Qing;Lin Xin;Zhao Xuan-Yu;Zhou Bao-Zeng;Zhang Kai-Liang(School of Materials Science and Engineering,Tianjin University of Technology,Tianjin 300384,China;Tianjin Key Laboratory of Film Electronic&Communication Devices,School of Electrical and Electronic Engineering,Tianjin University of Technology,Tianjin 300384,China;School of Microelectronics and Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology,Tianjin University,Tianjin 300072,China)

机构地区：[1]天津理工大学材料科学与工程学院,天津300384 [2]天津理工大学电气电子工程学院,天津市薄膜电子与通信器件重点实验室,天津300384 [3]天津大学微电子学院,天津市成像传感微电子技术重点实验室,天津300072

出　　处：《物理学报》2021年第9期187-199,共13页Acta Physica Sinica

基　　金：天津市自然科学基金(批准号:18JCZDJC30500,17JCYBJC16100,17JCZDJC31700);国家自然科学基金(批准号:61404091,61274113,61505144,51502203,51502204);天津市科技计划项目(批准号:20ZYQCGX00070);信息功能材料国家重点实验室开放课题(批准号:SKL202007);国家重点研发计划(批准号:2017YFB0405600)资助的课题。

摘　　要：近年来,α-MoO_(3)在忆阻器件的研究中得到广泛关注,其中氧含量的变化导致电阻率的改变,以及独特的层状结构有利于各种离子的插层从而调节电导,因此其在离子栅结构的突触晶体管的研究中发挥出重要作用.本文主要对层状α-MoO_(3)的基本性质、二维层状α-MoO_(3)的大面积制备方法和特性及其在存储计算领域的应用进展进行了分析.首先阐述了α-MoO_(3)的晶体结构、能带结构以及缺陷态.对比了大面积α-MoO_(3)的制备方法,包括一步法直接得到α-MoO_(3)纳米片,以及通过磁控溅射和原子层沉积方法结合后退火工艺实现α-MoO_(3)薄膜的制备.详细讨论了不同合成方法制得的α-MoO_(3)在存储计算应用中的优势.对比α-MoO_(3)在阻变存储中的器件性能,总结α-MoO_(3)基神经突触器件性能及其应用进展.最后,结合α-MoO_(3)近期研究进展展望了其在存储计算领域的机会与挑战.In recent years, α-MoO3 has received extensive attention in the research of memristor devices. The variation of valence of molybdenum will lead the resistivity to change, and the unique layer structure is beneficial to the implantation of donor ion into free space to adjust the conductance, so that it has a great influence on the study of synaptic transistors. This paper mainly summarize the properties of α-MoO3, the method and characteristics of large-scale two-dimensional α-MoO3 and analyze the recent progress of in-memory computing based on α-MoO3. Primarily, this paper introduces crystal structures, band structure and defect state of α-MoO3. The synthesis methods of large-area α-MoO3 are compared with each other, including the onestep method to directly obtain a-MoO3 nanosheets, and the combined post-annealing process of magnetron sputtering or atomic layer deposition to prepare the thin α-MoO3 films. In the one-step synthesis method we conclude that the chamber pressure influences the ratio of MoO3 to MoO3–x, and the growth temperature affects the ratio of α-MoO3 to β-MoO3. That is to say, the phase composition of molybdenum trioxide, the concentration of precursors has an important influence on the film size. The advantages of a-MoO3 synthesis by different methods in memory computing applications are discussed in detail. And then, this paper summarizes the device performance of a-MoO3 in memristor and the application progress of a-MoO3-based neuromorphic devices, and analyzes the performance of α-MoO3-based resistive random access memory such as switching ratio,endurance, and stability in detail. The synaptic functions of different structural device units are extensively studied, and various typical synapse functions are realized such as short-term plasticity, long-term plasticity,paired pulse facilitation, etc. It shows the excellent characteristics of low energy consumption in the simulation of synaptic plasticity. The use of short-term memory and long-term memory modes of the device can reali

关 键 词：α-MoO_3 大面积制备 存储计算 神经形态器件 

分 类 号：TN60[电子电信—电路与系统] TQ136.12[化学工程—无机化工]