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作 者:刘佳 秦世斌 Liu Jia;Qin Shibin(College of mechanical and electrical engineering,Xinlian College of Henan Normal University,Zhengzhou Henan,450001)
机构地区:[1]河南师范大学新联学院机电工程学院,河南郑州450001
出 处:《电子测试》2021年第8期89-90,59,共3页Electronic Test
摘 要:为了解决发射极钝化和背面接触(Psssivated emitter and rear contact)单晶硅太阳能电池(以下简称PERC电池)背电场质量差、孔洞问题,对硅片背面形貌和激光开槽宽度进行了优化。通过进行背面抛光和激光开槽宽度的优化,可有效降低表面的能态密度,杜绝孔洞的出现并形成均匀的P~+层,进而减少电池背表面的复合速率,通过工艺优化,电池转换效率达到19.82%,比改进工艺前生产的电池转换效率提高了0.63%。另外,背面抛光工艺可明显提高背面氧化硅和氮化硅的沉积速度,从而增加设备利用率。In order to solve the problems of poor quality of back electric field and holes in single crystal silicon solar cells(PERC)with passive emitter and rear contact,the back surface morphology and laser slot width of silicon wafer were optimized.Through back polishing and laser groove width optimization,the surface energy state density can be effectively reduced,holes can be eliminated and uniform P+layer can be formed,thus reducing the recombination rate of battery back surface.Through process optimization,the conversion efficiency of the battery reaches 19.82%,which is 0.63%higher than that of the battery produced before the process improvement.In addition,the deposition rate of silicon oxide and silicon nitride on the back surface can be significantly increased by the back surface polishing process,thus increasing the utilization rate of the equipment.
分 类 号:TM914.41[电气工程—电力电子与电力传动]
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