高功率半导体激光列阵芯片测试表征与仿真优化  

Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips

作　　者：杜宇琦 王贞福[1] 张晓颖 杨国文[1] 李特[1] 刘育衔 李波[1,2] 常奕栋 赵宇亮 兰宇 DU Yu-qi;WANG Zhen-fu;ZHANG Xiao-ying;YANG Guo-wen;LI Te;LIU Yu-xian;LI Bo;CHANG Yi-dong;ZHAO Yu-liang;LAN Yu(State Key Laboratory of Transient Optics and Photonics,Xi an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi an 710119,China;University of Chinese Academy of Sciences,Beijing 100049,China;Shaanxi Institute of Metrology Science,Xi an 710100,China)

机构地区：[1]中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119 [2]中国科学院大学,北京100049 [3]陕西省计量科学研究院,陕西西安710100

出　　处：《发光学报》2021年第5期674-681,共8页Chinese Journal of Luminescence

基　　金：国家自然科学基金(61504167);陕西省自然科学基金(2019ZY-CXPT-03-05,2018JM6010,2015JQ6263);陕西省科技厅人才项目(2017KJXX-72)资助。

摘　　要：针对高功率半导体激光芯片工作温度升高易引起芯片性能退化和失效问题,首先理论分析了工作温度对内量子效率的影响机理。其次,为量化温度影响芯片稳定性的主要因素,自主搭建高功率半导体激光列阵芯片测试系统,研究15~60℃半导体激光列阵芯片的温度特性,分析了5种能量损耗分布及其随温度的变化趋势。实验结果表明,当温度由15℃升高至60℃,载流子泄漏损耗占比由2.30%急剧上升至11.36%,是造成半导体激光芯片在高温下电光转换效率降低的主要因素。最后进行了外延结构的仿真优化,仿真结果表明,提高波导层Al组分至20%,能有效限制载流子泄漏,平衡Al组分增加带来的串联电阻增大问题,可以获得高效率输出。该研究对高温下半导体激光芯片的设计具有重要的指导意义。Due to small size,light weight,high efficiency and long operation life,high power semiconductor laser array chips have gradually entered into mass-markets and emerged applications,such as laser pumping,materials processing,medical therapy and lidar.However,limited by high-temperature working environments such as material processing,the development of high power semiconductor laser is hindered.Since laser diode arrays work in high-temperature working environments and generate great quantity during operating,the output power and reliability of high power semiconductor laser is decreased,which is caused by reducing in slope efficiency,increasing in threshold current,and wavelength redshift.Hence,it is vital to research the optoelectronic performance and laser diode array optimization of semiconductor laser under high temperature.To improve the high temperature performance of high-power semiconductor laser chips,firstly,the influence mechanism of environment temperature on internal quantum efficiency is analyzed theoretically.Secondly,in order to quantify the main factors affecting the stability of the chip,the high-power semiconductor laser array chips test system was built to study the characteristics of the laser diode array chips at 15-60℃,and analyze energy loss distribution at various temperatures.The experimental results show that when the temperature rises from 15℃to 60℃,the percentage of carrier leakage loss increases sharply from 2.30%to 11.36%,which is the main factor affecting the high temperature operation of semiconductor laser array chips.Finally,the chip structure simulation shows that increasing the Al composition of the waveguide layer to 20%can effectively limit carrier leakage,balance the increase in series resistance caused by the increase of Al composition,and obtain high electro-optical conversion efficiency.This research can provide a reference for the design of high-temperature laser diode array chips.

关 键 词：高功率 半导体激光列阵芯片 高温特性 能量损耗分布 

分 类 号：TN248.4[电子电信—物理电子学]