调控空穴传输层的分子取向提高有机发光二极管性能  被引量:2

Improving Performance of Organic Light-emitting Diodes by Tuning Molecular Orientation in Hole Transport Layer

在线阅读下载全文

作  者:崔东岳 王帅 李淑红[1,2] 刘云龙 王文军[1,2] CUI Dong-yue;WANG Shuai;LI Shu-hong;LIU Yun-long;WANG Wen-jun(School of Physical Science and Information Technology,Liaocheng University,Liaocheng 252059,China;Shandong Provincial Key Laboratory of Optical Communication Science and Technology,Liaocheng 252059,China)

机构地区:[1]聊城大学物理科学与信息工程学院,山东聊城252059 [2]山东省光通信科学与技术重点实验室,山东聊城252059

出  处:《发光学报》2021年第5期691-699,共9页Chinese Journal of Luminescence

基  金:国家自然科学基金(61775089);山东省自然科学基金(ZR2017BF009);聊城大学项目(318011904,318051650)资助。

摘  要:有机发光二极管(OLED)器件性能的提高一直是有机电致发光领域备受关注的研究课题之一,通过优化OLED器件中的载流子平衡是提高OLED器件性能的一个非常重要的手段。但是,调控空穴传输层或电子传输层中的分子取向,从而优化器件中的载流子平衡未被关注。本文通过对空穴传输层进行不同温度的退火处理来改变空穴传输层中的分子取向,研究分子取向对其空穴迁移率和OLED器件性能的影响。研究发现,退火温度的升高使得空穴传输层中具有垂直取向的分子的比例增加,促进了空穴迁移率的提高。当把具有不同分子取向的空穴传输层应用于OLED器件时,可以清楚地观察到载流子平衡因子对器件性能的影响。The performance improvement of organic light-emitting diodes(OLED)devices has always been one of the research topics in the field of organic electroluminescence.Optimization of carrier balance in OLED devices is a critical method to improve the performance of OLED devices.However,it is often neglected to optimize the carrier balance in the OLEDs by tuning the molecular orientation in the hole transport layer or electron transport layer.In this paper,the molecular orientation in the hole transport layer was altered by heat annealing at different temperatures to study the influence of molecular orientation on the hole mobility and the performance of OLED device.It showed that the proportion of molecules with vertical orientation in the hole transport layer was increased with the rise of annealing temperature,which promoted the increase of the hole mobility.When the hole transport layers with different molecular orientations were applied to OLED devices,the effect of the carrier balance factor on the device performance can be clearly observed.

关 键 词:有机发光二极管 载流子平衡 单空穴器件 分子取向 

分 类 号:TN312.8[电子电信—物理电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象