Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor  

作　　者：Si-De Song Su-Zhen Wu Guo-Zhu Liu Wei Zhao Yin-Quan Wang Jian-Wei Wu Qi He 宋思德;吴素贞;刘国柱;赵伟;王印权;吴建伟;贺琪(The 58th Institution of Electronic Science and Technology Group Corporation of China,Wuxi 214000,China)

机构地区：[1]The 58th Institution of Electronic Science and Technology Group Corporation of China,Wuxi 214000,China

出　　处：《Chinese Physics B》2021年第4期448-452,共5页中国物理B（英文版）

基　　金：Project supported by the Equipment Developing Advanced Research Program of China(Grant No.6140A24030107)。

摘　　要：The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High constant drain voltage stress has only a negligible impact on the device electrical parameters,with a slightly first increase and then decrease in output current;(ⅱ) A negative shift of threshold voltage and increased output current were observed in the device subjected to forward gate bias stress,which is mainly ascribed to the hole-trapping induced by high electric field across the p-GaN/AlGaN interface;(ⅲ) The analyzed device showed an excellent behavior at reverse gate bias stress,with almost unaltered threshold voltage,output current,and gate leakage current,exhibiting a large gate swing in the negative direction.The results are meaningful and valuable in directing the process optimization towards a high voltage and high reliable enhanced AlGaN/GaN high-electron mobility transistor.

关 键 词：high-electron-mobility transistors(HEMTs) stress degradation threshold voltage 

分 类 号：TN386[电子电信—物理电子学]