Implementation of synaptic learning rules by TaO_(x) memristors embedded with silver nanoparticles  

作　　者：Yue Ning Yunfeng Lai Jiandong Wan Shuying Cheng Qiao Zheng Jinling Yu 宁玥;赖云锋;万建栋;程树英;郑巧;俞金玲(School of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China)

机构地区：[1]School of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China

出　　处：《Chinese Physics B》2021年第4期475-481,共7页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61674038);the Natural Science Foundation of Fujian Province,China(Grant No.2019J01218);the Fund from the Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China(Grant No.2021ZR145);the Science Fund from the Fujian Provincial Department of Industry and Information Technology of China(Grant No.82318075)。

摘　　要：As an alternative device for neuromorphic computing to conquer von Neumann bottleneck,the memristor serving as an artificial synapse has attracted much attention.The TaO^(x) memristors embedded with silver nanoparticles(Ag NPs)have been fabricated to implement synaptic plasticity and to investigate the effects of Ag NPs.The TaO^(x) memristors with and without Ag NPs are capable of simulating synaptic plasticity(PTP,STDP,and STP to LTP),learning,and memory behaviors.The conduction of the high resistance state(HRS) is driven by Schottky-emission mechanism.The embedment of Ag NPs causes the low resistance state(LRS) conduction governed by a Poole-Frenkel emission mechanism instead of a space-charge-limited conduction(SCLC) in a pure TaO^(x) system,which is ascribed to the Ag NPs enhancing electric field to produce additional traps and to reduce Coulomb potential energy of bound electrons to assist electron transport.Consequently,the enhanced electric fields induced by Ag NPs increase the learning strength and learning speed of the synapses.Additionally,they also improve synaptic sensitivity to stimuli.The linearity of conductance modulation and the reproducibility of conductance are improved as well.

关 键 词：resistive switching synaptic plasticity MEMRISTOR 

分 类 号：TN60[电子电信—电路与系统] TB383.1[一般工业技术—材料科学与工程]