多片导模法蓝宝石晶体的缺陷研究  

Defects of Multi-Plate Sapphire Grown from EFG Technique

作　　者：陈伟超 罗平[2] 王庆国[2] 唐慧丽[2] 薛艳艳 段金柱[3] 王勤峰[3] 雷震霖 徐军[2] CHEN Weichao;LUO Ping;WANG Qingguo;TANG Huili;XUE Yanyan;DUAN Jinzhu;WANG Qinfeng;LEI Zhenlin;XU Jun(School of Technology,Puer University,Puer 665000,China;School of Physics Science and Engineering,Tongji University,Shanghai 200092,China;TDG Holding Co.,Ltd.,Haining 314412,China;SKY Technology Development Co.,Ltd.,Chinese Academy of Science,Shenyang 110179,China)

机构地区：[1]普洱学院理工学院,普洱665000 [2]同济大学物理科学与工程学院,上海200092 [3]天通控股股份有限公司,海宁314412 [4]中国科学院沈阳科学仪器股份有限公司,沈阳110179

出　　处：《人工晶体学报》2021年第4期741-746,756,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61177037);国家自然科学基金重大研究计划(91333106);上海蓝宝石单晶工程技术研究中心项目(14DZ2252500)。

摘　　要：使用导模法(EFG)生长了多片a面蓝宝石晶体。显微拉曼光谱结合电感耦合等离子体发射光谱(ICP-AES)测试得出晶体的气泡中可能存在含S化合物。晶体表面明显的生长条纹主要与温度、生长速度的波动以及模具的加工精度有关。化学腐蚀分析表明晶体位错密度在4.2×10^(4) cm^(-2),未存在小角度晶界缺陷,双晶摇摆曲线半峰宽(FWHM)为70.63″。由于采用石墨保温材料,晶体中存在F心与F+色心。晶体在400~3000 nm波段透过率高于80%,空气中退火后可减弱色心吸收。本文研究结果可为蓝宝石晶体缺陷形成理论研究提供参考,也可为导模法蓝宝石工业生产技术改进提供借鉴。Multi-plate sapphire crystals were grown by EFG technique.Micro-laser Raman spectrum and ICP-AES were used to identify the chemical composition of the matters in bubbles,showing that these matters may contain sulphur.Growth striations at the surface of the crystal were concerned with fluctuation of growth rate and temperature as well as the working accuracy of the die.Chemical etching test shows that the crystal has a dislocation density of 4.2×10^(4) cm^(-2) and there is no low angle grain boundary defect.X-ray rocking curve measurement shows a single peak with FWHM of 70.63″.Owing to graphite heat shade,the crystal contains F and F+centers.The transmittance of the crystal is over 80%at light wavelength from 400 nm to 3000 nm.Annealing the crystal in air can reduce optical absorption caused by color centers.The results of this paper are useful to theoretical study on formation of defects in sapphire and technical improvement on EFG sapphire industury.

关 键 词：蓝宝石 导模法 晶体生长 缺陷 气泡 色心 

分 类 号：O734[理学—晶体学]