6~18GHz GaAs射频前端多功能MMIC  

6-18GHz GaAs RF Front-End Multifunctional MMIC

作　　者：成立鑫 要志宏[1] Cheng Lixin;Yao Zhihong(The 13^(th)Research Instituste,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2021年第4期274-278,共5页Semiconductor Technology

摘　　要：基于GaAs单片微波集成电路(MMIC)工艺设计并制备了一款宽带射频前端多功能电路芯片,其包含功率放大器、限幅低噪声放大器(LNA)和收发开关。功率放大器采用平衡式结构同时选择合适的匹配网络实现宽带匹配;限幅器第一级采用功分结构提高耐功率能力;LNA前三级采用电流复用拓扑结构实现低功耗,最后一级采用自偏置结构增加动态范围;天线端的开关具有较高的功率容量,保证信号经过开关后不会压缩而导致发射支路输出功率不足。测试结果显示,电路在6~18 GHz频带内,接收支路噪声系数典型值为3.7 dB,增益约为27 dB,1 dB压缩点输出功率典型值大于7 dBm,功耗约为140 m W,能耐受1 W的连续波输入功率;发射支路饱和输出功率大于30 dBm,功率附加效率典型值为26%。Based on the GaAs monolithic microwave integrated circuit(MMIC)process,a broadband RF front-end multifunctional circuit chip which contained a power amplifier,a limiting low noise amplifier(LNA)and transmitting and receiving switches was designed and prepared.The power amplifier adopted a balanced structure and selected a suitable matching network to realize broadband matching.The first stage of the limiter adopted a power division structure to improve the power withstand capability.The first three stages of the LNA adopted a current multiplexing topological structure to achieve low power consumption,and the last stage used a self-biased structure to increase dynamic range.The switch at the antenna end had the higher power capacity,which ensured that the switch would not cause insufficient output power due to the signal compression.The test results show that at 6-18 GHz,the receiving branch has a typical noise figure of 3.7 d B,a gain of about 27 dB,a typical output power at 1 dB compression point of more than 7 d Bm,a power consumption of about 140 m W,and it can withstand 1 W continuous wave input power.The transmitting branch has a saturation output power of more than 30 dBm,and a typical power added efficiency of 26%.

关 键 词：GAAS 射频前端 单片微波集成电路(MMIC) 低噪声系数 高功率附加效率 

分 类 号：TN432[电子电信—微电子学与固体电子学]