Mg_(2)Si/Si雪崩光电二极管的设计与模拟  

Design and simulation of Mg_(2)Si/Si avalanche photodiode

作　　者：王傲霜 肖清泉 陈豪 何安娜 秦铭哲 谢泉 Wang Ao-Shuang;Xiao Qing-Quan;Chen Hao;He An-Na;Qin Ming-Zhe;Xie Quan(Institute of Advanced Optoelectronic Materials and Technology,College of Big Data and Information Engineering,Guizhou University,Guiyang 550025,China)

机构地区：[1]贵州大学大数据与信息工程学院,新型光电子材料与技术研究所,贵阳550025

出　　处：《物理学报》2021年第10期331-339,共9页Acta Physica Sinica

基　　金：贵州省留学回国人员科技活动择优资助项目(批准号:[2018]09);贵州省高层次创新型人才培养项目(批准号:[2015]4015);贵州省研究生科研基金(批准号:[2020]035)资助的课题.

摘　　要：Mg_(2)Si作为一种天然丰富的环保材料,在近红外波段吸收系数高,应用于光电二极管中对替代市面上普遍使用的含有毒元素的红外探测器具有重要意义.采用Silvaco软件中Atlas模块构建出以Mg_(2)Si为吸收层的吸收层、电荷层和倍增层分离结构Mg_(2)Si/Si雪崩光电二极管,研究了电荷层和倍增层的厚度以及掺杂浓度对雪崩光电二极管的内部电场分布、穿通电压、击穿电压、C-V特性和瞬态响应的影响,分析了偏置电压对IV特性和光谱响应的影响,得到了雪崩光电二极管初步优化后的穿通电压、击穿电压、暗电流密度、增益系数(Mn)和雪崩效应后对器件电流的放大倍数(M).当入射光波长为1.31μm,光功率为0.01 W/cm^(2)时,光电二极管的穿通电压为17.5 V,击穿电压为50 V,在外加偏压为47.5 V(0.95倍击穿电压)下,器件的光谱响应在波长为1.1μm处取得峰值25 A/W,暗电流密度约为3.6×10^(-5) A/cm^(2),M_(n)为19.6,且M_(n)在器件击穿时有最大值为102,M为75.4.根据模拟计算结果,优化了器件结构参数,为高性能的器件结构设计和实验制备提供理论指导.InGaAs and HgCdTe materials are widely used in short wave infrared photodetectors,which contain heavy metal elements.The massive use of the heavy metal elements naturally results in their scarcity,and the nonnegligible environmental pollution.Searching for other suitable materials for infrared devices becomes a key to solving the above problems.As a kind of abundant and eco-friendly material,Mg_(2)Si has a high absorption coefficient in the near-infrared band.Its application in infrared detector makes it possible to replace the infrared devices containing toxic elements on the market in the future.The Mg_(2)Si/Si avalanche photodiode(APD)with separation structure of absorption layer,charge layer and multiplication layer,with Mg_(2)Si serving as the absorption layer,is constructed by using the Atlas module in Silvaco software.The effects of the thickness and doping concentration of the charge layer and multiplier layer on the distribution of internal electric field,punchthrough voltage,breakdown voltage(V_(b)),C-V characteristics,and transient response of Mg_(2)Si/Si SACM-APD are simulated.The effects of bias voltage on the I-V characteristics and spectral response are analyzed.The punch-through voltage,breakdown voltage,dark current density,gain coefficient(Mn)and the current amplification factor(M)after avalanche effect of APD are obtained after the structure optimization.According to the simulation results,the spectral response wavelength of the device is extended to 1.6μm,so the selection of Mg_(2)Si as the absorption layer effectively extends the spectral response band of Si based APD.When the wavelength of incident light is 1.31μm and the optical power is 10 mW/cm^(2),the obtained punch-through voltage is 17.5 V,and the breakdown voltage is 50 V.When the bias voltage is 47.5 V(0.95Vb),the peak value of spectral response is 25 A/W at a wavelength of 1.1μm,a density of dark current is about 3.6×10^(-5) A/cm^(2),a multiplication factor M_(n) is 19.6,and M_(n) achieves a maximum value of 102 when the device

关 键 词：SACM-APD Mg_(2)Si/Si 异质结 光谱响应 增益系数 

分 类 号：TN312.7[电子电信—物理电子学] TQ132.2[化学工程—无机化工]