High-current MoS transistors with non-planar gate configuration  

具有非平面栅极配置的高电流MoS_(2)晶体管

作　　者：Jun Lin Bin Wang Zhenyu Yang Guoli Li Xuming Zou Yang Chai Xingqiang Liu Lei Liao 林均;王滨;杨振宇;李国立;邹旭明;柴扬;刘兴强;廖蕾(Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices,School of Physics and Electronics,Hunan University,Changsha 410082,China;Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China;College of Microtechnology&Nanotechnology,Qingdao University,Qingdao 266071,China;State Key Laboratory for Chemo/Biosensing and Chemometrics,School of Physics and Electronics,Hunan University,Changsha 410082,China)

机构地区：[1]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education&Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices,School of Physics and Electronics,Hunan University,Changsha 410082,China [2]Department of Applied Physics,The Hong Kong Polytechnic University,Hong Kong,China [3]College of Microtechnology&Nanotechnology,Qingdao University,Qingdao 266071,China [4]State Key Laboratory for Chemo/Biosensing and Chemometrics,School of Physics and Electronics,Hunan University,Changsha 410082,China

出　　处：《Science Bulletin》2021年第8期777-782,M0003,共7页科学通报（英文版）

基　　金：supported by the National Key Research and Development Program of China(2018YFA0703704 and2018YFB0406603);China National Funds for Distinguished Young Scientists(61925403);the National Natural Science Foundation of China(61851403,51872084,61704052,61811540408,and61704051);the Strategic Priority Research Program of Chinese Academy of Sciences(XDB30000000);in partly by the Key Research and Development Plan of Hunan Province(2018GK2064)。

摘　　要：The ever-decreasing size of transistors requires effectively electrostatic control over ultra-thin semiconductor body.Rational design of the gate configuration can fully persevere the intrinsic property of two-dimensional(2 D)semiconductors.Here we design and demonstrate a 2 D Mo S_(2) transistor with omega-shaped gate,in which the local gate coupling is enhanced by the non-planar geometry.The omega-shaped non-planar transistors exhibit a high current of 0.89 A/lm and transconductance of32.7 l S/lm.The high performance and desirable current saturation promise the construction of robust logic gate.The inverters show a voltage gain of 26.6 and an ideal total margin nearly 89%.We also assemble NOT-AND(NAND)gate on an individual Mo S_(2) flake,and the constructed NAND gate demonstrates the universal functionality of the transistors as well.This work provides an alternative strategy to fully take the advantages of 2 D materials for high-performance field-effect transistors.减小沟道材料的厚度并针对栅极结构进行合理设计,有利于增强短沟道场效应晶体管的栅极控制能力.二维半导体具有优异的电学性能,其原子级别的厚度可以实现较强的栅极耦合效果.我们研制了具有Ω型非平面栅极结构的Mo S_(2)晶体管,实现了局部栅极耦合效应的增强,Mo S_(2)顶栅晶体管的跨导达到32.7μS/μm,饱和电流高达0.89 A/μm.在此基础上,我们设计了非门反相器,其电压增益为26.6,噪声迁移达到89%,与非门器件实现了基本的逻辑功能.本文为研制高性能二维半导体场效应晶体管提供了新思路.

关 键 词：MoS_(2)transistors Omega-shaped gate NON-PLANAR High current density 

分 类 号：TN386[电子电信—物理电子学]