基于SONOS型嵌入式flash存储器的扰动失效测试算法研究  

Investigation on disturbance characteristics and test algorithm of SONOS embedded flash memory

作　　者：乌勒 刘武[1] 洪亮 WU Le;LIU Wu;HONG Liang(National Key Laboratory of Science and Technology on Micro/Nano Fabrication,Shanghai Jiao Tong University,Shanghai 200240,China;Department of Micro/Nano Electronics,School of Electronic Information and Electrical Engineering,Shanghai Jiao Tong University,Shanghai 200240,China;Shanghai Huali Micro Electronics Co.,LTD.,Shanghai 201314,China)

机构地区：[1]上海交通大学微米/纳米加工技术国家级重点实验室,上海200240 [2]上海交通大学电子信息与电气工程学院微纳电子学系,上海200240 [3]上海华力微电子有限公司,上海201314

出　　处：《微电子学与计算机》2021年第5期7-13,共7页Microelectronics & Computer

基　　金：上海市科委专业技术服务平台(19DZ2291103)。

摘　　要：目前flash扰动失效测试算法无法检测SONOS型flash存储器的全部扰动失效,特别是对读扰动失效检测的失效覆盖率低,且测试效率不高.针对这一问题,本文对March-FT测试算法进行扩展和优化,提出了一种用于检测SONOS型flash存储器的扰动失效测试算法——March-SONOS.结合算法评估系统验证,March-SONOS测试算法可检测SONOS型flash存储器的全部扰动失效,且失效覆盖率达到100%,同时算法测试效率提高55.97%.The current Flash disturbance failure test algorithm cannot detect all the disturbance failures of SONOS-type Flash memory,especially the failure coverage of read disturbance failure test is low,and the test efficiency is poor.To solve this problem,this paper extends and optimises the March-FT test algorithm,and put forward the March-SONOS test algorithm,which is used to detect the disturbance failure test algorithm of SONOS-type Flash memory.Combined with the verification of the algorithm evaluation system,the March_SONOS test algorithm can detect all disturbance failures of SONOS-style Flash memory,and the failure coverage rate reaches 100%.Meanwhile,the algorithm test and test efficiency is improved by 55.97%.

关 键 词：SONOS 扰动失效模型 March-SONOS算法 算法评估系统 

分 类 号：TN407[电子电信—微电子学与固体电子学]