绝缘体上硅波导侧壁粗糙度与模式损耗的相关性  

Investigation for Relationship between Sidewall Roughness of Silicon-on-insulator Waveguide and Loss of Guided-mode

作　　者：王彬[1] 孙德贵 尚鸿鹏 WANG Bin;SUN Degui;SHANG Hongpeng(School of Science,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学理学院,长春130022

出　　处：《光子学报》2021年第5期151-157,共7页Acta Photonica Sinica

基　　金：Talent Plan Fund of Jilin Provincial Human Resources and Social Security(No.634190874002);Natural Science Foundation of Jilin Province/China(No.20180101223JC);Human Resources and Social Security Talent Plan Fund of Jilin Province(No.634190874002);Natural Science Foundation of Jilin Province(No.20180101223JC)。

摘　　要：绝缘体上硅光波导侧壁粗糙度引起的光损耗是限制硅基集成线路被广泛应用的重要因素之一,利用激光扫描共聚焦显微镜精确测量了SOI波导各相异性分布的侧壁粗糙度,进而将一个三维侧壁粗糙度引入到光波导传输损耗计算的传统理论模型中,获得了更加精确的模型。数值模拟表明,侧壁粗糙度与波导结构决定的相关长度与侧壁粗糙度对光传输损耗产生同步影响。用法布里-珀罗(F-P)腔调制谐振输出方法测量光波导传输损耗,测量结果与数值计算结果非常吻合,说明各相异性粗糙度分布的测量精度及其引起的光传输损耗的理论模型具有很高的可信度。一条4μm脊宽SOI波导,当侧壁粗糙度在水平和垂直方向的平均值分别为22 nm和23 nm时,对于TE-和TM-模式,计算获得的传输损耗均为4.5~5.0 dB/cm,实验获得的平均光传输损耗为4.3 dB/cm。本文研究结果与结论对SOI光波导器件的研究与开发具有参考价值。The optical loss caused by Waveguide Sidewall Roughness(SWR)of Silicon-on-insulator(SOI)is one of the restrictions to the adoptions of silicon photonic integrated circuits.In this paper,the anisotropic SWR of an SOI waveguide is measured by Conformal Laser Scanning Microscope(CLSM)and with introduction of a Three-dimensional(3 D)anisotropic SWR,the traditional theoretical model for defining the Optical Propagation Loss(OPL)coefficient,so that a more accurate theoretical model is obtained.Numerical simulations show that the waveguide structure determined Correlation Length(CL)and the SWR have the synchronous effects on the OPL.Fabry-Perot(F-P)cavity modulation resonance output is used to accurately measure the OPL,and the measured values are agreeable with the simulation result,implying the improved model has more believability.For a waveguide with a 4μm width,when the average horizontal and vertical SWR values are 22 nm and 23 nm,respectively,the simulation results of OPL coefficient for both TE-and TM-mode are 4.5~5.0 dB/cm,while the experimental result is 4.9 dB/cm.Hence,the outcomes and conclusion obtained are very valuable to be referred for research and development of SOI waveguide devices.

关 键 词：绝缘体上硅波导 侧壁粗糙度 相关长度 光传输损耗 光损耗测量 

分 类 号：TN256[电子电信—物理电子学]