基于IGBT的宽范围线性功率放大技术  

Wide-range Linear Power Amplification Technology Based on IGBT

作　　者：陈柏超[1] 高伟[1] 陈耀军[1] CHEN Baichao;GAO Wei;CHEN Yaojun(School of Electrical Engineering and Automation,Wuhan University,Wuhan 430072,China)

机构地区：[1]武汉大学电气与自动化学院,武汉430072

出　　处：《电源学报》2021年第3期175-181,共7页Journal of Power Supply

摘　　要：模块化多电平分级逐段线性化思想可以大幅提高线性功率放大器的效率,绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)作为一种大功率器件用于其中将会大大简化大功率放大器的电路,但IGBT的类别中没有P沟道管,传统的复合P管用于线性功率放大时存在输出电压动态范围不足的问题。首先分析了该问题的形成原因,并提出一种宽动态范围的P-IGBT结构,然后分析了该结构的特性与功率放大机理,同理构造出特性完全对称的N-IGBT管,接着利用这2种异型对管构成互补线性功率放大器,最后通过实验验证了该技术的正确性。The idea of modular multi-level grading segment-by-segment linearization can greatly improve the efficiency of linear power amplifiers.As a high-power device,the IGBT will greatly simplify the circuit of high-power amplifiers.However,there is no P-channel transistor in the IGBT category,and when the traditional composite P transistor is used for linear power amplification,there exists a problem that the dynamic range of output voltage is insufficient.First,the cause of this problem is analyzed,and a P-IGBT structure with a wide dynamic range is proposed.Then,the characteristics of this structure and the power amplification mechanism are analyzed.Similarly,the N-IGBT transistor with completely symmetrical characteristics is constructed.On this basis,the heterogeneous pair of transistor constitutes a complementary linear power amplifier.Finally,the proposed technology was verified by experiments.

关 键 词：IGBT 线性功率放大 P沟道管 线性放大区 

分 类 号：TM46[电气工程—电器]