氮化物应力膜SOI SiGe异质结双极晶体管的频率特性研究  

Research on Frequency Characteristics of SOI SiGe Heterojunction Bipolar Transistor with Nitride Stress Film

作　　者：刘培培 文剑豪 魏进希 王冠宇[1] 周春宇 LIU Peipei;WEN Jianhao;WEI Jinxi;WANG Guanyu;ZHOU Chunyu(College of Electronic Engineering,Chongqing University of Posts and Telecommunications,,Chongqing 400065,China;Key Laboratory for Microstructures Materials Physics of Hebei Province,School of Science,Yanshan University,Qinhuangdao 066004,China)

机构地区：[1]重庆邮电大学光电工程学院,重庆400065 [2]燕山大学理学院河北省微结构材料物理重点实验室,河北秦皇岛066004

出　　处：《重庆理工大学学报（自然科学）》2021年第5期163-169,共7页Journal of Chongqing University of Technology：Natural Science

基　　金：国家自然科学基金项目(61704147);河北省教育厅科学基金项目(QN2017150)。

摘　　要：为了提高器件的频率特性,设计了一种表面覆盖氮化物(Si_(3)N_(4))应力膜的应变硅SOI SiGe异质结双极晶体管结构,通过在器件结构的最上层淀积一层Si_(3)N_(4),使其在基区引入单轴压应力,增强载流子的迁移率,来提高器件的截止频率f_(T)和最高振荡频率f_(max)。采用SILVACO软件进行仿真,重点研究不同埋氧化层厚度和氮化膜对器件频率特性的影响。结果表明:在埋氧化层厚度为190nm,基区Ge组分为17%~30%的阶梯型分布且淀积Si_(3)N_(4)薄膜引入应力时,截止频率f_(T)约为638GHz,最高振荡频率f_(max)约为795GHz。与传统的SOISiGeHBT相比,截止频率f_(T)提高了38GHz,最高振荡频率f_(max)提高了44GHz。To improve the frequency characteristics of the device,the structure of SOI SiGe HBT tha covered with nitride stress film was designed.Depositing a layer of Si_(3)N_(4) on the top layer of the device structure introduces uniaxial compressive stress in the base to enhance the carrier mobility and improve the cutoff frequency and the maximum oscillation frequency.It focuses on the effects of different buried oxide thicknesses and nitride film on the frequency characteristics of the device by using SILVACO software for simulation.The results show that,when the T_(BOX)is 190 nm,the Ge composition of the base is 17%to 30%in a stepped distribution and a layer of Si_(3)N_(4) is deposited to introduce stress,the cutoff frequency is about 638 GHz,and the maximum oscillation frequency is about 795 GHz.Compared with the traditional SOI SiGe HBT,The cutoff frequency is increased by38 GHz and the maximum oscillation frequency is increased by 44 GHz.

关 键 词：单轴应变 SOI SiGe HBT 埋氧化层厚度 频率特性 

分 类 号：TN322+.8[电子电信—物理电子学]